DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
Features
- This device is designed for low level analog switching, sa mple and hold circuits and chopper stabilized amplifiers.
- Sourced from Process 51.
- Source & Drain are interchangeable. Absolute Maximum Ratings* Ta = 25C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta = 25C unless otherwise noted * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06". Symbol Parameter Value Units VDG Drain-Gate Voltage 35 V VGS Gate-Source Voltage -35 V IGF Forward Gate Current 50 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C Symbol Parameter Max. Units J111-113 *MMBFJ111-113 PD Total Device Dissipation Derate above 25C 625 5.0 350 2.8 mW mW/C RJC Thermal Resistance, Junction to Case 125 C/W RJA Thermal Resistance, Junction to Ambient 357 556 C/W J111 MMBFJ111 SOT-23 Mark: MMBFJ111 - 6P D S J112 MMBFJ112 GS D TO-92 J113 MMBFJ112_SB51338 MMBFJ113 G MMBFJ112 - 6R MMBFJ112_SB51338 - 6R MMBFJ113 - 6S NOTE: Source & Drain are interchangeable.
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch © 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 Rev. B0 2 Electrical Characteristics Ta = 25°C unless otherwise noted * Pulse Test: Pulse Width 300s, Duty Cycle 3.0% Typical Performance Characteristics Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BV(BR)GSS Gate-Source Breakdown Voltage I G = -1.0A, VDS = 0 -35 V IGSS Gate Reverse Current V GS = -15V, VDS = 0 -1.0 nA VGS(off) Gate-Source Cutoff Voltage V DS = 5.0V, ID = 1.0A 111 112 MMBFJ112_SB51338 113 -3.0 -1.0 -3.0 -0.5 -10 -5.0 -5.0 -3.0 V V V V I D(off) Drain Cutoff Leakage Current V DS = 5.0V, VGS = -10V 1.0 nA On Characteristics IDSS Zero-Gate Voltage Drain Current* VDS = 15V, IGS = 0 111 112 113 5.0 2.0 mA mA mA r DS(on) Drain-Source On Resistance V DS 0.1V, VGS = 0 111 112 113 100 Small Signal Characteristics Cdg(on) Csg(on) Drain Gate & Source Gate On Capacitance VDS = 0, VGS = 0, f = 1.0MHz 28 pF Cdg(off) Drain-Gate Off Capacitance V DS = 0, VGS = -10V, f = 1.0MHz 5.0 pF Csg(off) Source-Gate Off Capacitance V DS = 0, VGS = -10V, f = 1.0MHz 5.0 pF r - DRAIN "ON" RESISTANCE (ΩΩ) Parameter Interactions 0.5 1 2 5 10 100 100 V - GATE CUTOFF VOLTAGE (V) g - TRANSCONDUCTANCE (mmhos) GS (OFF) fs I , g @ V = 15V, V = 0 PULSED r @ 1.0 mA, V = 0 V @ V = 15V, I = 1.0 nA GS(off) DSS r DI DSS DS DS GS DS DS GS fs DS DS g fs Common Drain-Source 0 0.4 0.8 1.2 1.6 2 V - DRAIN-SOURCE VOLTAGE (V) I - DRAIN CURRENT (mA) DS D - 0.4 V - 1.0 V - 0.8 V - 0.2 V - 0.6 V V = 0 VGS T = 25°C TYP V = - 2.0 VGS(off) A - 1.2 V- 1.4 V
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch © 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 Rev. B0 3 Typical Performance Characteristics (continued) Transfer Characteristics -3-2-10 V - GATE-SOURCE VOLTAGE (V) I - DRAIN CURRENT (mA) GS D V = - 3.0 VGS(off) 25°C V = 15 VDS V = - 2.0 VGS(off) 125°C - 55°C 25°C - 55°C 125°C Transfer Characteristics -1.5-1-0.50 V - GATE-SOURCE VOLTAGE (V) I - DRAIN CURRENT (mA) GS D V = - 1.6 VGS(off) 25°C V = 15 VDS V = - 1.1 VGS(off) 125°C - 55°C 25°C - 55°C 125°C Transfer Characteristics -3-2-10 V - GATE-SOURCE VOLTAGE (V) g - TRANSCONDUCTANCE (mmhos) GS fs V = - 3.0 VGS(off) 25°C V = 15 VDS V = - 2.0 VGS(off) 125°C - 55°C 25°C 125°C - 55°C Transfer Characteristics -1.5-1-0.50 V - GATE-SOURCE VOLTAGE (V) g - TRANSCONDUCTANCE (mmhos) GS fs V = - 1.6 VGS(off) 25°C V = 15 VDS V = - 1.1 VGS(off) 125°C - 55°C 25°C 125°C - 55°C On Resistance vs Drain Current 12 5 1 0 2 0 5 0 1 0 0 100 I - DRAIN CURRENT (mA) r - DRAIN "ON" RESISTANCE D DS V TYP = - 7.0V GS(off) 25°C (Ω) 125°C 25°C 125°C r @ V = 0GS - 55°C DS V TYP = - 2.0V GS(off) - 55°C Normalized Drain Resistance vs Bias Voltage 0 0.2 0.4 0.6 0.8 1 100 V /V - NORMALIZED GATE-SOURCE VOLTAGE (V)r - NORMALIZED RESISTANCE GS DS r = DS V @ 5.0V, 10 μAGS(off) r DS V GS(off) V GS1 - GS(off)
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch © 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 Rev. B0 4 Typical Performance Characteristics (continued) Output Conductance vs Drain Current 0.01 0.1 10 0.1 100 I - DRAIN CURRENT (mA) g - OUTPUT CONDUCTANCE ( mhos)D os V = - 5.0VGS(off) T = 25°C f = 1.0 kHz V = 5.0VDG μ A 10V 15V 20V 5.0V V = - 2.0VGS(off) V = - 0.85VGS(off) 10V 15V 20V 10V 15V 20V 5.0V Transconductance vs Drain Current 0.1 1 10 100 I - DRAIN CURRENT (mA) g - TRANSCONDUCTANCE (mmhos) D fs V = - 1.4VGS(off) T = 25°C V = 15V f = 1.0 kHz A DG V = - 3.0VGS(off) Capacitance vs Voltage -20-16-12-8-40 100 V - GATE-SOURCE VOLTAGE (V) C (C ) - CAPACITANCE (pF)rs GS is C (V = 0)is DS C (V = 20)is DS C (V = 0)rs DS f = 0.1 - 1.0 MHz Noise Voltage vs Frequency 0.01 1 10 100 100 f - FREQUENCY (kHz) e - NOISE VOLTAGE (nV / Hz)n V = 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.21 @ f ≥ 1.0 kHz DG I = 10 mAD I = 1.0 mAD Noise Voltage vs Current 0.01 0.1 1 10 100 I - DRAIN CURRENT (mA) e - NOISE VOLTAGE (nV / Hz)n V = 15VDG D f = 10 Hz f = 100 Hz f = 1.0 kHz f = 10 kHz f = 100 kHz Power Dissipation vs Ambient Temperature 02 5 5 0 7 5 1 0 0 1 2 5 1 5 0 100 200 300 400 500 600 700 TEMPERATURE ( C) P - POWER DISSIPATION (mW) D o TO-92 SOT-23
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch © 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 Rev. B0 5 Typical Performance Characteristics (continued) Switching Turn-On Time vs Gate-Source Voltage -10-8-6-4-20 V - GATE-SOURCE CUTOFF VOLTAGE (V) t ,t - TURN-ON TIME (ns)r(ON) GS(off) d(ON) V = 3.0V t APPROX. I INDEPENDENT DD Dr V = 3.0V T = 25°C GS(off) A I = 6.6 mA V = -12V D GS t r (ON) t d (ON)2.5 mA - 6.0V Switching Turn-Off Time vs Drain Current 02468 1 0 100 I - DRAIN CURRENT (mA) t ,t - TURN-OFF TIME (ns) D d(OFF) OFF T = 25°C V = 3.0V V = -12V t DEVICE V INDEPENDENTGS(off) A DD GS d(off) V = -2.2V GS(off) - 4.0V - 7.5V t d(off) t (off)
© Fairchild Semiconductor Corporation www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool¥ AccuPower¥ AX-CAP¥* BitSiC¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥ Fairchild® Fairchild Semiconductor® FACT Quiet Series¥ FACT® FAST® FastvCore¥ FETBench¥ FlashWriter®* FPS¥ F-PFS¥ FRFET® Global Power Resource SM GreenBridge¥ Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ Making Small Speakers Sound Louder and Better™ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥ MotionMax¥ Motion-SPM¥ mWSaver¥ OptoHiT¥ OPTOLOGIC® OPTOPLANAR® PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ Saving our world, 1mW/W/kW at a time™ SignalWise¥ SmartMax¥ SMART START¥ Solutions for Your Success¥ SPM® STEALTH¥ SuperFET® SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS® SyncFET¥ Sync-Lock™ The Power Franchise® TinyBoost¥ TinyBuck¥ TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TranSiC¥ TriFault Detect¥ TRUECURRENT®* PSerDes¥ UHC® Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ VoltagePlus¥ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61