SB3200 SMC | Alldatasheet

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Technical content

Technical Data Green Products Data Sheet N0091 Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 /filetalltext (86) 25-87123907 • SB3200 SB3200 SCHOTTKY RECTIFIER Applications: /circle6 Switching power supply /circle6 Converters /circle6 Free-Wheeling diodes /circle6 Reverse battery protection /circle6 Disk drives /circle6 Battery charging Features: /circle6 Schottky Barrier Chip /circle6 Guard Ring Die Construction for Transient Protection /circle6 High Current Capability /circle6 Low Power Loss, High Efficiency /circle6 High Surge Current Capability /circle6 For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications /circle6 This is a Pb − Free Device /circle6 All SMC parts are traceable to the wafer lot /circle6 Additional testing can be offered upon request Mechanical Dimensions: In Inches / mm DO-201AD

Technical Data Green Products Data Sheet N0091 Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 /filetalltext (86) 25-87123907 • SB3200 Marking Diagram: Where XXXXX is YYWWL SB = Device Type 3 = Forward Current (3A) 200 = Reverse Voltage (200V) SSG = SSG YY = Year WW = Week L = Lot Number Cautions ：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package Shipping SB3200 DO-201AD (Pb-Free) 1250 pcs / Tape For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification.

Technical Data Green Products Data Sheet N0091 Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 /filetalltext (86) 25-87123907 • SB3200 Maximum Ratings and Electrical Characteristics @T A=25° C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol SB3200 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 200 V Average Rectified Output Current (Note 1) @T A = 105° C Io 3.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 110 A Forward Voltage @I F = 3.0A V FM 0.90 V Peak Reverse Current @T A = 25° C At Rated DC Blocking Voltage @T A = 125° C IRM 1.0 6.0 mA Typical Junction Capacitance (Note 2) Cj 150 pF Max. Voltage Rate of Change dv/dt 10,000 V/µs Storage Temperature Range T STG -55 to +150 ° C Max. Junction Temperature TJ -55 to +150 ° C Approximate Weight wt 1.02 g Case Style DO-201AD Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.

Technical Data Green Products Data Sheet N0091 Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 /filetalltext (86) 25-87123907 • SB3200 0.00001 0.0001 0.001 0.01 0.1 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (% ) Instantaneous Reverse Current-IR(mA) 100 Forward Voltage Drop-VF(V) Instantaneous Forward Current-IF(A) 100 1000 5 10 15 20 25 30 35 40 Reverse Voltage-VR(V) Junction Capacitance-CT(PF) TJ=25 ℃ Fig.3-Typical Forward Voltage Drop Characteristics Fig.2-Typical Values Of Reverse Current Vs.Reverse Voltage TJ=125 ℃ TJ=25 ℃ Fig.1-Typical Junction Capacitance Vs.Reverse Voltage TJ=125 ℃ TJ=25 ℃

Technical Data Green Products Data Sheet N0091 Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 /filetalltext (86) 25-87123907 • SB3200 DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..