SB320 HDSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

o 3.0A

  • VRRM 20V-100V
  • High surge current capability

Applications

  • Rectifier Marking Polarity: Color band denotes cathode SB3XX XX:From 20 to 100 DO-2 DO-27 Plastic-Encapsulate Diodes Schottky Rectifier SB320 THRU SB3100 Electrical Characteristics (Ta=25℃ Unless otherwise specified） Item Symbol Unit Test Condition SB3 Peak Forward Voltage V FM V I FM Peak Reverse Current I RRM1 mA V RM RRM Ta=25℃ 0.1 I RRM2 Ta=125℃ 10 Thermal Resistance(Typical) R θJ-A /W℃ Between junction and ambient 40 R θJ-L Between junction and lead 10 20 30 40 50 60 80 100 Item Symbol Unit Conditions Repetitive Peak Reverse Voltage V RRM V Average Forward Current I F(AV) A 60Hz Half-sine wave, Resistance 3.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave,1 cycle, Ta=25℃ 80 Junction Temperature T J Storage Temperature T STG ℃ -55 ~ +150 20 30 40 50 60 80 100 20 30 40 50 60 80 100 SB3 load, TL(Fig.1) V 14 21 28 35 42 56 70 Maximum RMS V RMS Vo ltage

H igh Diode Semiconductor 1.5 2.25 50 150 FIG.1 FORWARD CURRENT DERATING CURVE IO(A) Single Phase Half Wave 60Hz Resistive or Inductive Load 0.375''(9.5mm) Lead Length Ta( 100 0.75 3.0 FIG.4: TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(mA) Tj=25 Tj=125 Tj=75 0.001 0.01 0 20 40 60 80 100 0.1 1.0 100 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 1 2 10 20 100 SB320-SB360 SB380-SB3100 SB320-SB340 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS TJ=25 Pulse width=300us 1% Duty Cycle 0.1 0.2 0.2 VF V 1.0 SB350-SB360 SB380-SB3100

H igh Diode Semiconductor DO-2 Unit: in inches (millimeters) MIN 0.96(24.5) MIN 0.96(24.5)

H igh Diode Semiconductor Ammo Box Packaging Specifications For Axial Lead Rectifiers