SB3100 SMC | Alldatasheet

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Technical content

T e c h n i c a l D a t a Green Products Data Sheet N1004, Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • SB3100 SB3100 SCHOTTKY RECTIFIER Applications: z Switching power supply z Converters z Free-Wheeling diodes z Reverse battery protection z Disk drives z Battery charging Features: z Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z High Current Capability z Low Power Loss, High Efficiency z High Surge Current Capability z For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications z This is a Pb − Free Device z All SMC parts are traceable to the wafer lot z Additional testing can be offered upon request Mechanical Dimensions: In Inches / mm DO-201AD(C-02)

T e c h n i c a l D a t a Green Products Data Sheet N1004, Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • SB3100 Marking Diagram: Where XXXXX is YYWWL S B = D e v i c e T y p e 3 = Forward Current (3A) 100 = Reverse Voltage (100V) S S G = S S G Y Y = Y e a r W W = W e e k L = L o t N u m b e r Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package Shipping SB3100 DO-201AD(C-02) (Pb-Free) 200 pcs / bag For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Symbol Condition Max. Units Peak Inverse Voltage VRWM - 100 V Max. Average Forward I F(AV) 50% duty cycle @TC =105℃ rectangular wave form(L=0.375”) 3.0 A Max. Peak One Cycle Non-Repetitive Surge Current IFSM 8.3 ms, half Sine pulse 110 A SSG XXXXX S B 3100

T e c h n i c a l D a t a Green Products Data Sheet N1004, Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • SB3100 Electrical Characteristics: Characteristics Symbol Condition Max. Units Max. Forward Voltage Drop V F1 @ 3A, Pulse, TJ = 25℃ 0.79 V Max. Reverse Current I R1 @V R = rated VR TJ = 25℃ 1.0 mA I R2 @V R = rated VR TJ = 100℃ 10 mA Typical Junction Capacitance Cj @VR = 5.0 V, Tc=25℃ fSIG = 1MHz 250 pF * Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Junction Temperature Range T J - -55 to +150 ℃ Storage Temperature Range T stg - -55 to +150 ℃ Maximum Thermal Resistance Junction to Case RθJC DC operation 8 ℃/W Approximate Weight wt - 1.02 g Case Style DO-201AD

T e c h n i c a l D a t a Green Products Data Sheet N1004, Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • SB3100 100 Forward Voltage Drop-VF(V) Instantaneous Forward Current- IF(A) 100 1000 0 5 10 15 20 25 30 35 40 Reverse Voltage-VR(V) Junction Capacitance-CT(PF) 0.0001 0.001 0.01 0.1 10 20 30 40 50 60 70 80 90 100 R everse Voltage-VR (V) Reverse Current-IR(MA) TJ=125℃ TJ=25℃ TJ=25℃ TJ=25℃ TJ=125℃ Fig.3-Typical Forward Voltage Drop Characteristics Fig.1-Typical Junction Capacitance Vs.Reverse Voltage Fig.2-Typical Values Of Reverse Current Vs.Reverse Voltage

T e c h n i c a l D a t a Green Products Data Sheet N1004, Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • SB3100 DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..