SB3030PT WTE | Alldatasheet
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! S c h o t t k y B a r r i e r C h i p H ! Guard Ring for Transient Protection ! High Current Capability, Low Forward ! Low Reverse Leakage Current S ! H i g h S u r g e C u r r e n t C a p a b i l i t y J ! Plastic Material has UL Flammability R K C l a s s i f i c a t i o n 9 4 V - O P I N 1 2 3 L P M e c h a n i c a l D a t a N ! Case: Molded Plastic ! Terminals: Plated Leads Solderable per M MIL-STD-750, Method 2026 A ! P o l a r i t y : A s M a r k e d o n B o d y B ! Weight: 5.6 grams (approx.) ! Mounting Position: Any ! M a r k i n g : T y p e N u m b e r C PIN 1 - + P I N 3 - C a s e P I N 2 G D E Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol SB 3030PT SB 3035PT SB 3040PT SB 3045PT SB 3050PT SB 3060PT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 30 35 40 45 50 60 V RMS Reverse Voltage V R(RMS) 21 24.5 28 31.5 35 42 V Average Rectified Output Current @TC = 95°C I O 30 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 275 A Forward Voltage @IF = 15A V FM 0.55 0.70 V P e a k R e v e r s e C u r r e n t @ TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 1.0 75 mA Typical Junction Capacitance (Note 1) C j 1100 pF Typical Thermal Resistance Junction to Case (Note 2) R/G01JC 2.0 K/W Operating and Storage Temperature Range T j, TSTG -65 to +150 °C 2. Thermal resistance junction to case mounted on heatsink. WTE POWER SEMICONDUCTORS TO-3P Dim Min Max A 3.20 3.50 B 4.59 5.16 C 20.80 21.30 D 19.70 20.20 E 2.10 2.40 G 0.51 0.76 H 15.90 16.40 J 1.70 2.70 K 3.10 Ø 3.30 Ø L 3.50 4.51 M 5.20 5.70 N 1.12 1.22 P 2.90 3.30 R 11.70 12.80 S 4.30 Typical All Dimensions in mm
SB3030PT – SB3060PT 2 of 3 © 2002 Won-Top Electronics 0.1 1.0 100 0.2 0.4 0.6 0.8 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Fwd Characteristics per Element F SB3030PT- SB3045PT SB3050PT- SB3060PT T = 25°C Pulse width = 300 µs 2% duty cycle j 100 150 200 250 300 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current 8.3 ms single half-sine-wave JEDEC method 100 1000 4000 0.1 1.0 10 100 C , JUNCTION CAPACITANCE (pF)j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance per Element R T = 25°C f = 1MHz j 0.01 0.1 1.0 100 I , INSTANTANEOUS REVERSE CURRENT (A)R 04 0 8 0 PERCENT OF PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics per Element T = 100°CC T = 75°CC T = 25°CC 120 0 50 100 I , AVERAGE RECTIFIED CURRENT (A)(AV) T , CASE TEMPERATURE (°C) Fig. 1 Forward Derating Curve C 150
SB3030PT – SB3060PT 3 of 3 © 2002 Won-Top Electronics
ORDERING INFORMATION
Product No. Package Type Shipping Quantity SB3030PT TO-3P 30 Units/Tube SB3035PT TO-3P 30 Units/Tube SB3040PT TO-3P 30 Units/Tube SB3045PT TO-3P 30 Units/Tube SB3050PT TO-3P 30 Units/Tube SB3060PT TO-3P 30 Units/Tube Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, W TE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in l ife support devices or systems without the express written approval. We power your everyday. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com