SB2020FCT WTE | Alldatasheet

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Features

! S c h o t t k y B a r r i e r C h i p B ! Guard Ring for Transient Protection ! High Current Capability, Low Forward C ! Low Reverse Leakage Current ! H i g h S u r g e C u r r e n t C a p a b i l i t y G A ! Plastic Material has UL Flammability C l a s s i f i c a t i o n 9 4 V - O P I N 1 2 3 /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01D M e c h a n i c a l D a t a F E ! Case: ITO-220 Full Molded Plastic ! Terminals: Plated Leads Solderable per P MIL-STD-750, Method 2026 ! P o l a r i t y : A s M a r k e d o n B o d y I ! Weight: 2.24 grams (approx.) L ! M o u n t i n g P o s i t i o n : A n y H ! Marking: Type Number P I N 1 - + J P I N 3 - P I N 2 K Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol SB 2020FCT SB 2030FCT SB 2040FCT SB 2050FCT SB 2060FCT SB 2080FCT SB 20100FCT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 50 60 80 100 V RMS Reverse Voltage V R(RMS) 14 21 28 35 42 56 70 V Average Rectified Output Current @T C = 95°C I O 20 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 200 A Forward Voltage @I F = 10A V FM 0.55 0.75 0.85 V Peak Reverse Current @T A = 25°C At Rated DC Blocking Voltage @T A = 100°C IRM 0.5 100 mA Typical Junction Capacitance (Note 1) C j 1100 pF Operating and Storage Temperature Range T j, TSTG -65 to +150 °C WTE POWER SEMICONDUCTORS ITO-220 Dim Min Max A 14.9 15.1 B — 10.5 C 2.62 2.87 D 3.56 4.06 E 13.46 14.22 F 0.68 0.94 G 3.74 Ø 3.91 Ø H 5.84 6.86 I 4.44 4.70 J 2.54 2.79 K 0.35 0.64 L 1.14 1.40 P 2.41 2.67 All Dimensions in mm

I ,AVERAGE OUTP UT CURRENT (A) (AV) 10 40 60 80 100 120 140150 T , CASE TEM PERATU RE (ºC) Fig. 1 Forward Current Derating Curve C Single Pulse Half-Wave

60 Hz Resistive or Inductive Load

0.1 1.0 10 10 0 C ,CAP ACITANCE j V , REVERSE VOLTAGE (V) Fig. 4 T ypical Junction Capacitance R T = 25ºCj f = 1MHz 100 150 200 250 1 10 100 I , P EAK FORW ARD SUR GE CURRENT (A FS M NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current 8.3ms Single Half Sine-Wave JEDEC Method N STA NTANEOUS FORW ARD C URRENT ( F V , INSTANTANEOUS FORWARD VOLTAGE (V ) Fig. 2 T ypical Forward Characteristics F T = 25ºC Pulse Width = 300 s 2% Duty Cycle j µ SB2020FCT – SB20100FCT 2 of 3 © 2002 Won-Top Electronics 2080FCT - 20100FCT 2050FCT - 2060FCT 2020FCT - 2040FCT

SB2020FCT – SB20100FCT 3 of 3 © 2002 Won-Top Electronics

ORDERING INFORMATION

Product No. Package Type Shipping Quantity SB2020FCT ITO-220 50 Units/Tube SB2030FCT ITO-220 50 Units/Tube SB2040FCT ITO-220 50 Units/Tube SB2050FCT ITO-220 50 Units/Tube SB2060FCT ITO-220 50 Units/Tube SB2080FCT ITO-220 50 Units/Tube SB20100FCT ITO-220 50 Units/Tube Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, W TE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in l ife support devices or systems without the express written approval. We power your everyday. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com