SB20100 SMCDIODE | Alldatasheet

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Circuit Diagram Applications Maximum Ratings: Electrical Characteristics:  Switching power supply  Converters  Free-Wheeling diodes  Reverse battery protection  Disk drives  Battery charging  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  High Current Capability  Low Power Loss, High Efficiency  High Surge Current Capability  For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request DO-201AD

Data Sheet N1820, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SB20100 Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+150 C StorageTemperature Tstg - -55to+150 C TypicalThermalResistanceJunctionto case RJC DCoperation 4.5 C/W ApproximateWeight wt - 1.02 g Forinformationontapeandreelspecifications,includingpart orientationandtapesizes,pleaserefertoourtapeandreel packagingspecification. Thermal-Mechanical Specifications: Mechanical Dimensions DO-201AD SYMBOL Millimeters Inches Min. Max. Min. Max. A 25.4 - 1.000 - B 8.50 9.50 0.335 0.374 C 1.2 1.3 0.048 0.052 D 5.0 5.6 0.197 0.220 Ordering Information Marking Diagram Device Package Shipping SB20100 DO-201AD (Pb-Free) 1250pcs/tape WhereXXXXX isYYWWL SB20100 =Part Name SSG = SSG YY =Year WW =Week L =Lot Number

Data Sheet N1820, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SB20100 Carrier Tape Specification DO-201AD SYMBOL Millimeters Min. Max. A 9.50 10.50 B 50.9 53.9 Z - 1.20 T 5.60 6.40 E - 0.80 IL1-L2I - 1.0 DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdsalesdepartment forthelatestversionofthedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanydamagesthatmayresultfromanaccidentorany othercauseduringoperationoftheuser’sunitsaccordingtothedatasheet(s).SMC-SangdestMicroelectronics(Nanjing)Co.,Ltdassumes noresponsibilityforanyintellectualpropertyclaimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsor circuitsdescribedinthedatasheets. 4-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanyfailureinasemiconductordeviceoranysecondary damageresultingfromuseatavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMC-SangdestMicroelectronics(Nanjing) Co.,Ltd. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC- SangdestMicroelectronics(Nanjing)Co.,Ltd. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwillhinder maintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythirdparty.When exportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsandregulations..