SB1040DC ZSELEC | Alldatasheet
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atings and Electrical Characteristics @TA=25°C unl ess otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Reverse Voltage VR(RMS) Av erage Rectified Output Current @T L =75°C (Not e 1) IO 10 A Non-Repeti tive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM A Forward V ol tage @I F FM P ea k R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100°C IRM 0.1 20 mA Ty pical Junction Capacitance (Note 2) Cj Ty pical Thermal Resistance (Note 1) R/G01JA Operati ng and Storage Temperature Range Tj, TSTG °C Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. SB 1040DC SB 1050DC SB 1060DC 10100DC Units 0.74 350 280 200 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 10200DC 100 SB 1045DC SB1040DC-SB10200DC SB SB -55 to +150 SB SB 10150DC M ou n t i n g P o s i t i o n : A n y P o l a r i t y : S e e D i a g r a m erminals: Plated Leads Solderable per C l a s s i f i c a t i o n R a t i n g 9 4 V - O Plastic Case Material has UL Flammability G u a r d R i n g D i e C o n s t r u c t i o n For Use in Low Voltage Application Low Power Loss, High Efficiency I d e a l l y S u i t e d f o r A u t o m a t i c A s s e m b l y /G01/G01/G01/G01/G01 /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 M e ch a n i c a l D a t a ! T MIL- STD-202, Method 208 Lead Free: For RoHS / Lead Free Version ! Schottk y Barrier Chip Cas! e: TO-263AB(D PAK), Molded Plastic All Dimensions in millimeter DIM. MIN. MAX. A C D E F G H B 9.80 10.20 10.609.60 8.50 9.20 1.67---- 0.51 1.01 2.10 2.50 2.44 2.64 1.10 4.70 K J I 1.40 4.40 0.640.30 4.40 4.80 K J I HF D C A G E B TO-263AB/ D PAK TO-263AB/ D PAK2
/G01/G01 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE FIG.2-TYPICAL FORWARD CHARACTERISTICS 0.1 1.0 .01 INST ANTANEOUS FORWARD CURRENT,(A) FOR WARD VOLTAGE,(V) Pulse Width 300us 1% Duty Cycle 3.0 50~60V 80~100V 20~45V Tj=25 C 150~200V FIG.3-MAXIMUM NON-REPETITIVE FOR WARD SURGE CURRENT 150 120 NUMBER OF CYCLES AT 60Hz 11 05 50 100 Tj=25 C 8.3ms Single Half Sine W ave JEDEC method PEAK FOR WARD SURGE CURRENT,(A) FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE LEAKAGE CURRENT , (mA) 0.001 0.01 0.1 1.0 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) 20 40 60 80 100 20V~45V 50V~200V
5 CJ= °
T
100 CJ= °
A VERAGE FORWARD CURRENT ,(A) 20 40 60 80 100 120 140 160 180 200 CASE TEMPERATURE,(°C) SB1040DC-SB10200DC SB1040DC-SB10200DC