SB0845L ZSELEC | Alldatasheet

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and Electrical Characteristics @T A=25°C unl ess otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. 1 of 3 Top View Bottom View LEFT PIN RIG HT PIN Note: Pins Left & Right must be electrically connected at the printed circuit board. BOTTOMSIDE HEAT SINK Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com SB0845L-SB08200L 08100L0860L0850L0845L SBSBSB -55 to +150 -55 to +150 DC Forward Voltage Drop T =25 At Rated DC Blocking Voltage T =100 Peak Reverse Curent T =25 @IF=8A Junctionto Ambient Typical Thermal Resistance Average Rectified Output Current (Note1) Unit V A mA ℃ /W storage temperature range Note:1.Valid Provided that are kept at ambient temperature at a distance of 9.5mm from the case. Operating junction temperature range 0.3 0.50 VR(RMS) Non-Repetitive Peak Forward Surge8.3ms Single Half Sine-Wave Superimposed on rated 8.0 Parameter Symbol V RRM DC blocking voltage V load(JEDEC Method) Working Peak Reverse Voltage Peak Repetitive Reverse Voltage VRWM V V A140 RMS Rectified Voltage (Note2) IO IFSM VFM IR RθJA RθJL TJ TSTG A A 0880L SB SB 08150L S B 50 60 80 100 150 35 42 56 70 105 0.55 0.75 0.90 08200L SB 200 140 SB0845L-SB08200L Case:TO-277B Molded Plastic "Green" Molding Compound Excellent High Temperature Stability Lead Free: For RoHS/Lead Free Version High Thermal Reliability Ultra Low Power Loss, High Efficiency High Foward Surge Capability High Junction Temperture Bypass Diodes for Solar Panels! Mechanical Da ta ! T erminals : Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Mounting Position: Any ! Marking: Type Number Patented Super Barrier Rectifier Technology! ! Schottky Barrier Chip At I 2 t Rating for Fusing (t < 8.3ms) 2 2sI 81.3 Alldatasheet

R RR FIG.2 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS IINSTANTANEOUS FORWARD CURRENT, AMPERES 0.1 0.01 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.01 0.1 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 100 JUNCTION CAPACITANCE, pF 10000 1.0 4.0 10 100 1000 TJ=25 o C PULSE WIDTH=300uS 1% DUTY CYCLE TJ=100 o C TJ=25 o C TJ = 25 o C f = 1.0 MHZ Vsig = 50mVp-p SB0860L SB0845L-SB0850L SB0880L SB08100L SB08150L SB08200L FIG.1 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 10.0 8.0 4.0 2.0 6.0 0 50 100 150 LEAD TEMPERATURE, o C

60 Hz Resistive or

FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 100 125 150 175 200 1 10 100 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 2 of 3 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com SB0845L-SB08200L SB0845L-SB08200L Alldatasheet

SB08**L TO-277B 3 of 3

Ordering Information

Part Number Case Packaging 5000/Tape & Reel Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Outline Dimensions Suggested Pad Layout Dim Min Max A 1.05 1.15 B 0.33 0.43 C 0.80 0.99 D 1.70 1.88 E 3.90 4.05 F 3.054 Typ G 6.40 6.60 H 1.84 Typ I 5.30 5.45 J 3.549 Typ K 0.75 0.95 L 0.50 0.65 M 1.10 1.41 All Dimensions in mm Dimensions Value (i n m 1.840 a 3.360 c 1.390 b 4.860 d 1.400 G I C A B B E D C H F K J L M h a e d b c TO-277B e h 0.852 SB0845L-SB08200L SB0845L-SB08200L Alldatasheet