SB05T80L ZSELEC | Alldatasheet

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Technical content

Features

! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Mounting Position: Any ! Marking: Type Number M aximum Ratings and Electrical Characteristics A =25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Patented Super Barrier Rectifier Technology! Top View Bottom View LEFT PIN RIGHT PIN Note: Pins Left & Right must be electrically connected at the printed circuit board. BOTTOMSIDE HEAT SINK Z ibo Seno Electronic Engineering Co., Ltd. SB05T80L-SB05T200L ! Schottky Barrier Chip 5.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE 1 of 3 www.senocn.com SB05T80L-SB05T200L 05T120L05T80L SB -55 to +150 -55 to +150 DC At Rated DC Blocking Voltage T =100 Peak Reverse Curent T =25 Junctionto Ambient Typical Thermal Resistance Average Rectified Output Current (Note1) Unit V A mA ℃ /W storage temperature range Note:1.Valid Provided that are kept at ambient temperature at a distance of 9.5mm from the case. Operating junction temperature range 0.3 VR(RMS) Non-Repetitive Peak Forward Surge8.3ms Single Half Sine-Wave Superimposed on rated 5.0 Parameter Symbol V RRM DC blocking voltage V load(JEDEC Method) Working Peak Reverse Voltage Peak Repetitive Reverse Voltage VRWM V V A150 RMS Rectified Voltage (Note2) I O I FSM V FM I R R θJA R θJL T J T STG A A SB SB 05T150L SB 05T200L SB 200 140 T =25 @IF=3A℃A T =25 @IF=5A℃A Typ Max. Forward Voltage Drop T =25 @IF=1A℃A 0.40 0.45 0.550.50 At I t Rating for Fusing (t < 8.3ms) 2 2 s I 93.4 05T100L 100 120 150 105 Typ Max. 0.40 0.47 0.600.52 Typ Max. 0.53 0.66 0.800.71 05T60L SB Typ Max. 0.39 0.44 0.550.49 - - Typ Max. 0.58 0.72 0.850.77 0.75

R RR FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.01 0.1 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 100 JUNCTION CAPACITANCE, pF 10000 1.0 4.0 10 100 1000 T J =100 o C T J =25 o C T J = 25 o C f = 1.0 MHZ Vsig = 50mVp-p FIG.1 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 10.0 8.0 4.0 2.0 6.0 0 50 100 150 LEAD TEMPERATURE, o C

60 Hz Resistive or

FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 100 125 150 175 200 1 10 100 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 2 of 3 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com SB05T80L-SB05T200L SB05T80L-SB05T200L FIG.2 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS IINSTANTANEOUS FORWARD CURRENT, AMPERES 0.1 0.01 INSTANTANEOUS FORWARD VOLTAGE, VOLTS T J =25 o C PULSE WIDTH=300uS 1% DUTY CYCLE

SB05T**L TO-277B 3 of 3

Ordering Information

Part Number Case Packaging 5000/Tape & Reel Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Outline Dimensions Suggested Pad Layout Dim Min Max A 1.05 1.15 B 0.33 0.43 C 0.80 0.99 D 1.70 1.88 E 3.90 4.05 F

3.054 Typ

G 6.40 6.60 H

1.84 Typ

I 5.30 5.45 J 3.549 Typ K 0.75 0.95 L 0.50 0.65 M 1.10 1.41 All Dimensions in mm Dimensions Value (i n mm) 1.840 a 3.360 c 1.390 b 4.860 d 1.400 G I C A B B E D C H F K J L M h a e d b c TO-277B e h 0.852 SB05T80L-SB05T200L SB05T80L-SB05T200L