SB020 DSK | Alldatasheet
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FEATURES
Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability MECHANICAL DATA Case:JEDEC R--1,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.007 ounces,0.20 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UNITS M axim um recurrent peak reverse voltage V RRM V Max imum RMS v oltage V RMS V Maximum DC blocking voltage V DC V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG SB020 --- SB040 A For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications I F(AV) SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 20 --- 40 V CURRENT: 0.6 A R - 1 The plastic material carries U/L recognition 94V-0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS SB020 3.Thermal resistance junction to ambient mA I R I FSM NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. A - 55 ---- + 125 - 55 ---- + 150 0.6 10.0 0.5 0.55 Maximum instantaneous forw ard voltage @ 0.6 A (Note 1) V F SB030 SB040 V 20.0 Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
T J =125℃ 0.01 0.1 Pulse width=300 s 1% Duty Cycle 0.8 1.0 1.6 T J =25℃ AVERAGE FORWARD CURRENT AMPERES PEAK FORWARD SURGE CURREN T AMPERES AMPERES JUNCTION CAPACITANCE, pF PERCENT OF RATED PEAK REVERSE VOLTAGE,% CURRENT, MILLIAMPERES FIG.6--TYPICAL TRANSIENT THERMAL IMPEDANCE FIG.5--TYPICAL JUNCTION CAPACITANCE TRANSIENT THERMAL IMPEDANCE , REVERSE VOLTAGE,VOLTS PULSE DURATION,Sec. PEAK FORWARD SURGE CURRENT AMBIENT TEMPERATURE, SB020 --- SB040 FIG.1 -- FORWARD CURRENT DERATING CURVE FIG.4--TYPICAL REVERSE CHARACTERISTICS NUMBER OF CYCLES AT 60Hz FIG.2 --MAXIMUM NON-REPETITIVE FIG.3 --TYPICAL INSTANTANEOUS INSTANTANEOUS REVERSE LEAKAGE FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURREN T INSTANTANEOUS FORWARD VOLTAGE,VOLTS 1 10 100 T J J MAX 8.3ms Single Half Sine-Wave 100 400 0.1 1 10 100 T J =25℃ f=1.0MHz Vsig=50mVp-p 0.001 0.01 02 0 4 0 6 0 100 80 100 TJ=75℃ TJ=125℃ 0.1 TJ=25 0 20 40 60 80 100 120 Resistive or Inductive Load 0.375"(9.5mm) Lead Length 140 0.4 0.6 0.8 0.2 0.1 0.1 1 100.01 100 100 www.diode.kr Diode Semiconductor Korea