SAV-331 MINI | Alldatasheet

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Ultra Low Noise, Medium Current D-PHEMT Transistor Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Page 1 of 5 The Big Deal

  • Low noise figure, 0.5 dB
  • High gain, 24.1 dB
  • High IP3, +32.3 dBm
  • High P1dB, 19.6 dBm Product Overview Mini-Circuits’ SAV-331+ is a MMIC D-PHEMT transistor with an operating frequency range from 10 to 4000 MHz. This model combines high gain with extremely low noise figure, resulting in lower overall system noise. Low NF and IP3 performance make it an ideal choice for sensitive receivers in communications systems. Manufactured using highly repeatable D-PHEMT* technology, the unit comes housed in a tiny 4-lead SOT-343 package. This model requires external biasing and matching. Key Features Feature Advantages Wideband, 10 to 4000 MHz A single device covers many wireless communications bands including cellular, ISM, GSM, WCDMA, WiMax, WLAN, and more. High IP3 vs. DC power consumption
  • +32.3 dBm at 300 MHz
  • +38.7 dBm at 4000 MHz The SAV-331+ matches industry leading IP3 performance relative to device size and power consumption. Enhanced linearity over a broad frequency range makes the device ideal for use in:
  • Driver amplifiers for complex waveform upconverter paths
  • Drivers in linearized transmit systems Combines high gain (24.1 dB) with very low noise Figure (0.5 dB) The unique combination of high gain and low noise Figure results in lower overall system noise. 50Ω 10 to 4000 MHz * Depletion mode Pseudomorphic High Electron Mobility Transistor. CASE STYLE: MMM1362 SAV-331+

Ultra Low Noise, Medium Current D-PHEMT Transistor Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Page 2 of 5 SAV-331+ REV. OR M168623 SAV-331+ RS/CP/AM 190110 10-4000 MHz CASE STYLE: MMM1362 Product Features

  • Low Noise Figure, 0.5 dB typ. at 300 MHz
  • Gain, 24.1 dB typ. at 300 MHz
  • High Output IP3, +32.3 dBm typ. at 300 MHz
  • Output Power at 1dB comp., +19.6 dBm typ. at 300 MHz
  • Low Current, 60mA
  • External biasing and matching required Typical Applications
  • Cellular
  • ISM
  • GSM
  • WCDMA
  • WiMax
  • WLAN
  • UNII and HIPERLAN Function Pin Number Description Source 2 & 4 Source terminal, normally connected to ground Gate 3 Gate used for RF input Drain 1 Drain used for RF output General Description Mini-Circuits’ SAV-331+ is a MMIC D-PHEMT transistor with an operating frequency range from 10 to 4000 MHz. This model combines high gain with extremely low noise figure, resulting in lower overall system noise. Low NF and IP3 performance make it an ideal choice for sensitive receivers in communications systems. Manufactured using highly repeatable D-PHEMT* technology, the unit comes housed in a tiny 4-lead SOT-343 package. This model requires external biasing and matching. simplified schematic and pin description DRAIN GATE SOURCE DR AIN 1

3 G AT E

4 S OUR C E

SOT -343 (SC-70) PACKAGE * Depletion mode Pseudomorphic High Electron Mobility Transistor. +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Notes: (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Assumes DC quiescent conditions, Vgs = -0.51 V, Vds = 4 V. Absolute Maximum Ratings(1) Symbol Parameter Max. Units VDS Drain-Source Voltage2 5 V VGS Gate-Source Voltage2 -5 V VGD Gate-Drain Voltage2 -5 V IDS Drain Current2 149 mA PDISS Total Dissipated Power 400 mW PIN RF Input Power 20 dBm TCH Channel Temperature 150 °C TOP Operating Temperature -40 to 85 °C TSTD Storage Temperature -65 to 150 °C Electrical Specifications at TAMB=25°C, Frequency 10 to 4000 MHz SAV-331+ D-PHEMT Electrical Specifications at TAMB=25°C, Frequency 10 to 4000 MHz Page 2 of 4 Symbol Parameter Condition Min. Typ. Max. Units DC Specifications VGS Operational Gate Voltage VDS=4V, IDS=60 mA -0.81 -0.69 -0.57 V Vp Pinch-off Voltage VDS=1.5 V, IDS= 10% of Idss -0.81 V IDSS Saturated Drain Current VDS=4V, VGS=0 V 228 mA GM Transconductance VDS=4V, Gm=∆ IDSS/∆VP 282 mS Gate to Drain Leakage Current 1000 uA IGSS Gate leakage Current VGD=VGS=-4V 600 uA Specifications, Z0=50 Ohms (Figure 1)* NF Noise Figure VDS=4V, IDS=60 mA f=40 MHz 0.9 dB f=300 MHz 0.5 f=900 MHz 0.4 f=2000 MHz 0.5 0.8 f=4000 MHz 0.9 Gain Gain VDS=4V, IDS=60 mA f=10 MHz 24.6 dB f=300 MHz 24.1 f=900 MHz 21.3 f=2000 MHz 13.9 16.6 18.3 f=4000 MHz 11.5 OIP3 Output IP3 VDS=4V, IDS=60 mA f=10 MHz 30.9 dBm f=300 MHz 32.3 f=900 MHz 33.5 f=2000 MHz 35.5 f=4000 MHz 38.7 P1dB Power output at 1 dB Compression VDS=4V, IDS=60 mA f=10 MHz 19.1 dBm f=300 MHz 19.6 f=900 MHz 18.0 20.2 f=2000 MHz 18.9 21.1 f=4000 MHz 21.8 Thermal Resistance 109 °C/W * Tested on Mini-Circuits TB-471+ test board. VGD=-5V IGDO ΘJC

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Fig 1. Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Test Board TB-471+) Gain, Output power at 1dB compression (P1 dB) and output IP3 (OIP3) are measured using R&S Network Analyzer ZVA-24. Noise Figure measured using keysight PNA-X. Conditions: 1. Drain voltage (with reference to source, VDS)= 4V as shown. 2. Gate Voltage (with reference to source, VGS) is set to obtain desired Drain-Source current (IDS) as shown in graphs or specification table. 3. Gain: Pin= -25dBm 4. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output. 5. No external matching components used. Fig 2. Test Board used for characterization, Mini-Circuits P/N TB-471+ (Material: Rogers 4350, Thickness: 0.02”) Characterization Test Circuit

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Additional Detailed Technical Information Additional information is available on our web site www.minicircuits.com. To access this information enter the model number on our web site home page. Performance data, graphs, s-parameter data set (.zip file) Case Style: MMM1362 Plastic molded SOT-343 (SC-70) style package, lead finish: matte tin Suggested Layout for PCB Design: PL-300 Tape & Reel: F90 Standard quantities availabe on reel: 7” reels with 20, 50, 100, 200, 500, 1K, 2K, or 3K devices. Characterization Test Board: TB-471+ Environmental Ratings: ENV08T2 Product Marking ESD Rating Human Body Model (HBM): Class 0 (<250 V) in accordance with ANSI/ESD STM 5.1 - 2001 MSL Rating Moisture Sensitivity: MSL1 in accordance with IPC/JEDECJ-STD-020D