SAP15P SANKEN | Alldatasheet
Document overview
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Technical content
Features
I External Dimentions (Unit : mm) I Equivalent Circuit Diagram a b Weight: approx 8.3g a. Part Number b. Lot Number➀➁ ➂ ➃➄
B D 2.5mA 40mA D CNPN S S E E PNP C B –VCC +VCC
Application Information
- Recommended Operating Conditions ➀ Add a variable resistor (VR) between diode terminals to adjust the idling current. The resistor having 0 to 200Ω is to be used. ➁ Adjust the forward current flowing over the diodes at 2.5mA. ➂ Adjust the idling current at 40mA with the external variable resistor. Both the temperature coefficients for the transistor and the diodes are matched under the above conditions. Both the PNP and the NPN are Darlington transistors, so the temperature change ratio of the total four VBE of the transistors is subject to the compensation. One PN junction diode in the NPN and five Schottky barrier diodes in the PNP are built-in, and the total six diodes are operating as the temperature compensation. The temperature coefficient of the total diodes (its variable value) becomes smaller with a larger forward current (approximately – 0.2mV/°C to 1mA), and the coefficient of the total transistors (its variable value) also becomes smaller with a larger idling current (approximately –0.1mV/°C to 10mA), but the both variable values are small. Thus, the distortion of the temperature coefficient caused by the different current is small, so the thermal runaway may not be occurred due to the changes of the recommended ratings; however, the actual operation is to be confirmed by using an experimental equipment or board.External variable resistor (VR) (0 to 200Ω )
VBE Min. (P and N: hFE Max.) VBE Max. (P and N: hFE Min.) IC 40mA ∆VF=500mV 2. External Variable Resistor Total forward voltage (at IF =2.5mA) of the diodes is designed to be equal or less than that of total VBE (at IC = 40mA) of the transistor, thus the idling current is required to be adjusted at 40mA with an additional external variable resistor. The relations are shown as below: Total V F of Diode Total VBE of Transistor + Total VRE of Emitter Resistor ∆V=0 to 500mV The VBE of the transistor is dependent to the hFE , and the VBE is lower with higher hFE and vice versa. The hFE for both the PNP and the NPN varies between 5k and 20k; thus the VBE is the lowest with the combination of maximum hFE (20k) each and it is the highest with the combination of minimum hFE (5k) each. Presuming the voltage difference between the VF of the diodes and the VBE of the transistors (including the total voltage drops of the two emitter resistors) as ∆V. Minimum VBE – Maximum VF variations of the diodes = 0 Maximum VBE – Minimum VF variations of the diodes = 500mV The current flowing over the diodes and the VR is adjusted at 2.5mA; therefore 500mV 2.5mA = 200Ω Consequently, the applicable VR value is to be 0 to 200Ω
1.0 10.0 5.0 0 500 1000 1500 VF (mV) IF (mA) IF – VF Characteristics 2000 2500 3000 PN-Di SBD (5 diodes Total) PN–Di+SBD 3. Characteristics of the temperature compensation diodes The several temperature compensation diodes are connected in series, so the forward voltage is varied with small current fluctuations. Therefore, in case the forward current flowing over the diodes is set at 2.5mA and over, the forward voltage rises, and in the worst combinations, the idling current reaches to 40mA and over with minimum VR of 0Ω . On the contrary, in case the forward current is set at 2.5mA or below, the idling current may not reach to 40mA with maximum VR of 200Ω . 4. Parallel push-pull application Adjustments of the idling current are required by each the resistor in parallel push-pull applications. One side adjustment will cause the idling current to be unstable (seesaw operation) because of the different hFE . Ta=25°C To be adjusted individually
Transistor destruction point Thick-film resistor destruction point A.S.O. Curve B D C S E 5. Destruction capacity of the built-in emitter resistor The built-in resistor is fabricated with polysilicone on the chip for the SAP08P/N and a thick-film resistor is used for the SAP10P/N and SAP15P/N. The latter, the thick-film resistor, has weaker destruction point in the Pc area (especially for large current flowing area) rather than that of the transistor chip itself. This is subject to the area beyond Safe Operating Area (S.O.A). However, under the evaluation like a short circuit test in which the current exceeds the guaranteed value, it may cause the emitter resistor to be destroyed before the transistor itself is destroyed. Consequently, the current value (or time) that operates the protection circuit is to be set at lower than that of discrete device configurations. In the application of car audio amplifiers, the same manners as the above need to be considered because the large current is flowed at low impedance. In addition, once the transistor falls into thermal runaway due to a soldering failure to the external VR added between diodes or other failure manners, as the worst case, there may cause a resin crack or smoke emissions by flare up. Flame retardant molding resin is used, and the material of the product is conformed to the most sever standard UL94V0. However it is recommended that the careful consideration be given to a protection circuit, and the protection circuits should be provided appropriately in due course. If the operating conditions are not to be matched to the ratings, it is also recommended that the E (Emitter resistor) terminal should be opened and the external emitter resistor should be added to the S (Sensing) terminal shown as below. (However this is not applicable to the SAP08P/N because a thin inner lead is used for S terminal.) External emitter resistor Output terminal
80 (Tc=25 °C) 150 –55 to +150 V VCEO 150 V VEBO 5 V IC 10 A IB 1 A PC W Tj °C150 Tstg °C (Ta=25 °C) (Ta=25 °C) ICBO IC=6A, IB=6mA VCB=150V IE =1A µA 100 100 150 5000 20000 2.0 2.5 1220 705 0.176 0.22 0.264 I EBO VEB =5V µA VCEO IC =30mA V hFE ✽ VCE =4V, IC=6A VCE(sat) IC=6A, IB =6mA V VBE(sat) V Di VF mVIF=2.5mA RE Ω min typ max 10Di IF mA VCE =20V, IC=40mAVBE mV External Dimensions (Unit: mm) ✽Rank O (5000 to 12000), Y (8000 to 20000) 15.4±0.3 4.5±0.2 17.8±0.3 4±0.1 3.3±0.23.4max 5±0.2 22±0.3 23±0.3 28±0.3 2±0.1 (18) (2.5) (41) 7±0.2 9.9±0.2 1.6±0.2 3.2±0.2 1.35 (36°) +0.2 –0.1 0.65 +0.2 –0.1 0.8 +0.2 –0.1 0.65 +0.2 –0.1 1±0.1 BD C SE 2.54±0.12.54±0.1 3.81±0.13.81±0.1 B D R: 70Ω Typ. C S E RE: 0.22Ω Typ. Emitter resistor Application: Audio Collector-Emitter Voltage VCE (V) Collector Current IC (A) DC Current Gain hFE 1000 200 500 5000 10000 50000 0.3mA 0.5mA 0.8mA 1.0mA1.3mA 2.0mA 2.5mA 10mA Base Current IB (mA) Collector-Emitter Saturation Voltage VCE(sat) (V) 150.3 0.5 10 100 50 Base-Emitter Voltage VBE (V) Collector Current IC (A) Collector Current IC (A) 0.1 0.50.03 1 5 10 0.1 0.5 Time t (ms) 101 5 50 100 500 2000 1000 IC –VCE Characteristics (Typical) Collector-Emitter Voltage VCE (V) Collector Current IC (A) 1035 0.1 0.05 0.5 50 200 100 Safe Operating Area (Single Pulse) VCE(sat) –IB Characteristics (Typical) IC –VBE Temperature Characteristics hFE –IC Characteristics (Typical) j-a – t Characteristics IC =8A (VCE =4V) 4A 125°C 25°C –30°C D.C 100ms 10ms 1.8mA 125°C 25°C –30°C 1.5mA IB=0.2mA (VCE=4V) Ambient Temperature Ta (°C) Maximum Power Dissipation Pc (W) 50 7502 5 3.5 100 150 125 PC –Ta Derating With In fin ite heatsink (Complement to type SAP08P) I Absolute maximum ratings I Electrical Characteristics Equivalent circuit Weight: Approx 8.3g a. Part Number b. Lot Number Symbol Ratings Unit Symbol Conditions Ratings Unit Transient Thermal Resistance j-a (°C/W) Without Heatsink Natural Cooling Without Heatsink (7.62) (12.7) a b