SAI01-1 SANKEN | Alldatasheet

Document overview

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Technical content

Features

l Surface-mount package with high output and efficiency l Requires only 4 external components l Phase correction and output voltage adjustment performed internally l Built-in reference oscillator (60 kHz) l Built-in overcurrent and thermal protection circuits

Applications

l For power supplies in telephone sets l For power supplies in office equipment External View Type No. V O (V) I O (A) SAI01 5 SAI02 3.3 SAI03 12 SAI04 15 0.4 SAI05 13 SAI06 9 n Absolute Maximum Ratings Parameter Symbol Ratings Unit DC Input Voltage V IN 35 V Power Dissipation P D 0.75 W Junction Temperature T j +125 °C Storage Temperature T stg –40 to +125 °C SW Terminal Applied Reverse Voltage V SW –1 V Thermal Resistance* (junction-to-case) R th(j-c) 20 °C/W * Refer to Outline Drawing for the case temperature measuring points. n Recommended Operating Conditions 0.5 n Lineup Switching Type Surface-mount and Separate Excitation Type Ratings Parameter Symbol SAI01 SAI02 SAI03 SAI04 SAI05 SAI06 Unit DC Input Voltage Range V IN 7 to 33 5.3 to 33 15 to 33 18 to 33 16 to 33 12 to 33 V Output Current Range I O 0 to 0.5 0 to 0.4 A Operating Junction Temperature Range Tjop –30 to +125 °C

Parameter Symbol SAI01 SAI02 SAI03 SAI04 SAI05 SAI06 Unit min typ max min typ max min typ max min typ max min typ max min typ max h 80 75 88 89 88 86 f 60 60 60 60 60 60 DVOLINE 80 100 60 80 100 130 100 130 100 130 90 110 DVOLOAD 30 40 20 30 70 95 90 120 75 100 50 80 R REJ 45 45 45 45 45 45 Condition f=100 to 120Hz Condition VIN=10V V IN=8V V IN=18V V IN=21V V IN=19V V IN=15V n Electrical Characteristics n Outline Drawing (unit:mm) n Block Diagram a. Type b. Lot number A Case temperature measuring point Plastic Mold Package Type Flammability: UL94V-0 Weight: Approx. 0.22 g SAI Series Output Voltage V Efficiency % Switching Frequency kHz Line Regulation mV Load Regulation mV mV/°C Ripple Rejection dB Overcurrent Protection AStarting Current Terminal Connections (1) Input (2) Switching output (3) Output Voltage Detection (4) Ground A 3VOS ab4 .GND 2 SW 1VIN 6.8max. 4.0max. 4.7max. 2.54–0.25 4.32–0.2 8.0–0.5 3.6–0.2 1.4–0.2 3.0–0.2 9.8–0.3 0~0.1 6.3–0.2 1.0–0.3 0.89–0.15 0.26 0.75 +0.15 –0.05 0.3 +0.15 –0.05 SW VOS VIN GND Osc Reg. Ocp Comp. Reset Drive TSD Amp. VREF

n Example of Printed-circuit board The efficiency depends on the input voltage and the output current. Thus, obtain the value from the efficiency graph on page 8 and substitute the per- centage in the formula above. V O : Output voltage IO : Output current hc : Efficiency (%) VF : Diode forward voltage SFPB54-0.3V Thermal design for D1 must be performed sepa- rately. n Selecting external components 1. Inductor L1 q It must be suited for switching regulators. Do not use inductors for noise filters as they generate excessive heat. w It must have the appropriate inductance value. If the inductance is too small (150mH or lower), abnormal oscillation may occur causing operation problems in the overcurrent protection circuit within the rated current range. e The rated current must be satisfied. If the rated current is exceeded, magnetic saturation leads to overcurrent. 2. Capacitors C1 and C2 q They must satisfy the breakdown voltage and allowable ripple current. Use of these capacitors over their derating values shortens their service lives and may also cause abnormal oscillation of the IC. w C2 must be a low-impedance type capacitor. A low-impedance type capacitor is recommended for C2 to ensure minimum ripple voltage and stable switching operation. 3. Diode D1 The Sanken SFPB54 diode is recommended for D1. If you intend to use an equivalent diode, be sure to make use of a Schottky barrier diode and make sure that the reverse voltage applied to terminal 2 of the IC does not exceed the value (–1V) given in the absolute maximum ratings. If you use a fast recovery diode or any other diode, application of a reverse voltage generated from the recovery or ON voltage of the diode may damage the IC. a) For optimum operation, there must be only one GND line originating from terminal 4 and each com- ponent must be con- nected with the shortest possible wiring. b) To prevent heating of the IC, it is best to make the GND pattern larger since the internal frame and ter- minal 4 (GND) are con- nected to each other. n Standard External Circuit n Ta-PD Characteristics VIN D I1 C1L1 C GND SW Vo 3 4 SAI VIN 3.3V 5V : 200µH 12V 13V 15V : 300µH 100µF 330µF VIN DC Input VOUT DC Output SFPB54 (Sanken) GND GND GND SAI SW VOS + + 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 -30 0 25 50 75 100 125

  • Glass epoxy substrate (95 · 69 · 1.2)
  • Natural cooling Power Dissipation PD (W) Ambient temperature Ta (°C) –VF • IO VO VIN PD = VO • IO 100 –1hc

SAI Series Typical Characteristics SAI Series Rise Characteristics Efficiency Characteristics Load Regulation (SAI01) (SAI01) (SAI01) 50 100 Case Temperature T C (°C) 150 200 VIN=20V,IO =20mA Output Voltage VO (V) 51 0 Input Voltage V IN (V) 15 20 Ta=25°C IO 0.2A 0.4A Output Voltage VO (V) 100 0.1 0.2 Output Current I O (A) 0.3 0.4 Ta=25°C VIN 15V 24V 33V Efficiency h (%) 12.3 12.2 12.1 12.0 11.9 11.8 0.1 0.2 Output Current I O (A) 0.3 0.4 Output Voltage VO (V) Ta=25°C VIN 33V 24V 20V 15V Temperature Characteristics Overcurrent Protection Thermal Protection (SAI01) Characteristics (SAI01) Characteristics (SAI01) Rise Characteristics Efficiency Load Regulation (SAI03) Characteristics (SAI03) (SAI03) 00246 Input Voltage V IN (V) IOUT 0.1A 0.5A Output Voltage VO (V) 81 0 Ta=25°C 100 Efficiency h (%) 0 0.1 0.2 0.3 Output Current IO (A) 0.4 0.5 Ta=25°C VIN 20V 33V 10V 25V 5.3 5.2 5.1 5.0 4.9 4.8 4.7 V IN 33V 20V 10V Output Voltage VO (V) 0 0.1 0.2 0.3 Output Current IO (A) 0.4 0.5 Ta=25°C 100 Efficiency h (%) frequency f (kHz) Outoput Voltage Vo (V) –50 0 50 Ambient Temperature Ta (°C) 100 150 VIN=20V, IO =0.3A VO f 5.3 5.2 5.1 5.0 4.9 4.8 4.7 h Output Voltage VO (V) 0 0.5 1.0 Output Current IO (A) 1.5 2.0 Ta=25°C VIN 20V 33V