NE4558 PHILIPS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Philips Semiconductors Linear Products Product specification NE/SA/SE4558Dual general-purpose operational amplifier 65August 31, 1994 853-0840 13721

DESCRIPTION

The 4558 is a dual operational amplifier that is internally compensated. Excellent channel separation allows the use of a dual device in a single amp application, providing the highest packaging density. The NE/SA/SE4558 is a pin-for-pin replacement for the RC/RM/RV4558.

FEATURES

  • 2MHz unity gain bandwidth guaranteed
  • Supply voltage ±22V for SE4558 and ±18V for NE4558
  • Short-circuit protection
  • No frequency compensation required
  • No latch-up
  • Large common-mode and differential voltage ranges
  • Low power consumption PIN CONFIGURATIONS D and N Packages 4 5 – + + – A B B OUT A OUT A IN– A IN+ B IN– B IN+

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # 8-Pin Plastic Small Outline (SO) Package 0 to +70°C NE4558D 0174C 8-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE4558N 0404B 8-Pin Plastic Dual In-Line Package (DIP) -40 to +85°C SA4558N 0404B 8-Pin Plastic Dual In-Line Package (DIP) -40 to +85°C SA4558D 0404B 8-Pin Plastic Dual In-Line Package (DIP) -55 to +125°C SE4558N 0404B EQUIVALENT SCHEMATIC 8 v+ 2(6) INPUTS 3(5) 4 V– OUYPUT 1(7)

Philips Semiconductors Linear Products Product specification NE/SA/SE4558Dual general-purpose operational amplifier August 31, 1994 66 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT VCC Supply voltage SE4558 ±22 V NE4558, SA4558 ±18 V PD MAX Maximum power dissipation, TA=25°C (Still air)1 N package 1160 mW D package 780 mW Differential input voltage ±30 V VIN Input voltage2 ±15 V TSTG Storage temperature range -65 to +150 °C TA Operating ambient temperature range SE4558 -55 to +125 °C SA4558 -40 to +85 °C NE4558 0 to +70 °C TSOLD Lead soldering temperature (10sec max) 300 °C Output short-circuit duration3 Indefinite NOTES: 1. Derate above 25°C at the following rates: N package at 9.3mW/°C D package at 6.2mW/°C 2. For supply voltages less than ±15V, the absolute maximum input voltage is equal to the supply voltage. 3. Short-circuit may be to ground on one amp only. Rating applies to +125°C case temperature or +75°C ambient temperature for NE4558 and to +85°C ambient temperature for SA4558. DC ELECTRICAL CHARACTERISTICS VCC =+15V, TA= 25°C unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS SE4558 SA/NE4558 UNITSYMBOL PARAMETER TEST CONDITIONS Min Typ Max Min Typ Max UNIT VOS Input offset voltage R S≤10kΩ 1.0 5.0 2.0 6.0 mV ΔVOS /ΔT Over temp. 4 4 µV/°C IOS Input offset current 50 200 30 200 nA ΔIOS /ΔT Over temp. 20 20 pA/°C IBIAS Input bias current 40 500 200 500 nA ΔIB/ΔT Over temp. 40 40 pA/°C R IN Input resistance 0.3 1.0 0.3 1.0 M Ω AV Large-signal voltage gain R L≥2kΩ VOUT =±10V 50,00 300,0 20,00 300,0

00 V/V

Output voltage swing R L≥10kΩ R L≥2kΩ ±12 ±10 ±14 ±13 ±12 ±10 ±14 ±13 V V VIN Input voltage range ±12 ±13 ±12 ±13 V CMRR Common-mode rejection ratio R S≤10kΩ 70 100 70 100 dB PSRR Power supply rejection ratio R S≤10kΩ 10 150 10 150 µV/V ISC Short-circuit current 5 25 60 5 25 60 mA Power consumption (all amplifiers) R L=∞ 120 170 120 170 mW

Philips Semiconductors Linear Products Product specification NE/SA/SE4558Dual general-purpose operational amplifier August 31, 1994 67 DC ELECTRICAL CHARACTERISTICS (Continued) SYMBOL PARAMETER TEST CONDITIONS SE4558 SA/NE4558 UNITSYMBOL PARAMETER TEST CONDITIONS Min Typ Max Min Typ Max UNIT tR Transient response (unity gain) VIN=20mV R L=2kΩ C L≤100pFtR Rise time 100 100 ns Overshoot 15.0 15.0 % SR Slew rate (unity gain) R L≥2kΩ 1.0 1.0 V/µs Channel separation (gain=100) f=10kHz R S=1kΩ 90 90 dB GBW Unity gain bandwidth (gain=1) 2.0 3.0 2.0 3.0 MHz θM Phase margin 45 45 De- gree VNOISE Input noise voltage f=1kΩ 25 25 nV/√H z NOTE: The following specifications apply over operating temperature range. VOS Input offset voltage R S≤10kΩ 6.0 7.5 mV IOS Input offset current 500 300/5001 nA IBIAS Input bias current 1500 800/1500 1 nA AV Large-signal voltage gain R L≥2kΩ VOUT =±10V 25,000 15,000 V/V Output voltage swing R L≥2kΩ ±10 ±10 V PC Power consumption TA=HIGH TA=LOW 105 125 150 200 115 120 150 200 mW mW NOTES: 1. SA4558 only.

Philips Semiconductors Linear Products Product specification NE/SA/SE4558Dual general-purpose operational amplifier August 31, 1994 68 TYPICAL PERFORMANCE CURVES ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ 100 0 10 20 30 40 50 60 70 TEMPERATURE ( oC) INPUT BIAS CURRENT ( A)µ VS = + 15V 0 10 20 30 40 50 60 70 TEMPERATURE ( oC) INPUT offset current ( A)µ TA = 25oC –15 –10 4 6 8 10 12 14 16 18 SUPPLY VOLTAGE (V) COMMON MODE VOLTAGE RANGE (V) ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ TA = 25oC –10 –15 4 6 8 10 12 14 16 18 R L = 2KΩ SUPPLY VOLTAGE (V) OUTPUT SWING (V) VS = + 15V 800K 600K 400K 200K 0 10 20 30 40 50 60 70 R L = 2KΩ VS = + 15V TEMPERATURE ( oC) VOLTAGE GAIN POWER CONSUMPTION (mV) 0 10 20 30 40 50 60 70 TEMPERATURE ( oC) 140 130 120 110 100 120 100 –20 1 10 100 1K 10K 100K1K 10M FREQUENCY (Hz) VOLTAGE GAIN (dB) LOAD RESISTANCE (K Ω )) PEAK T O PEAK OUTPUT SWING (V) VS = + 15V TA = 25oC PEAK T O PEAK OUTPUT SWING (V) 100 1K 10K 100K 1M FREQUENCY (Hz) VS = + 15V TA = 25oC R L = 25KΩ Input Bias as a Function of Ambient Temperature Input Offset Current as as a Function of Ambient Temperature Common–Mode Range as a Function of Supply Voltage Open–Loop Voltage Gain as a Function of Frequency Open–Loop Gain as a Function of Temperature Power Consumption as a Function of Ambient Temperature Typical Output Voltage as a Function of Supply Voltage Output Voltage Swing as a Function of Load Resistance) Output Voltage Swing as a Function of Frequency VS = + 15V

Philips Semiconductors Linear Products Product specification NE/SA/SE4558Dual general-purpose operational amplifier August 31, 1994 69 TYPICAL PERFORMANCE CURVES (Continued) VS = + 15V TA = 25oC 0 3 6 9 12 15 18 SUPPLY VOLTAGE (V) TA = 25oC QUIESCENT CURRENT (mA) 100 0.1 1 10 100 1K FREQUENCY (Hz) 10K 100K NOISE CURRENT (P A Hz)√ R S = 100K AV = 60dB VS = + 15V T = 25oC NOISE CURRENT (nV Hz)√ 1000 100 1 10 100 1K FREQUENCY (Hz) 10K 100K R S = 50Ω AV = 60dB VS = + 15V TA = 25oC 90% 10% RISE TIME OUTPUT (mV) TIME (µS) R S = 2KΩ C L = 100pF VS = + 15V TA = 25oC –10 0 5 10 20 TIME (µS) OUTPUT VOL TAGE 30 40 140 120 100 10 100 1K 10K FREQUENCY (Hz) 100k CHANNEL SEP ARATION (dB) VS = + 15V TA = 25oC 1 2 3 4 5 6 7 8 9 10 VO OUTPUT VOLTAGE (V RMS ) TOTAL HARMONIC DISTROTION ON (2) 1kHz (%) VS = + 15V R L = 2KΩ AV = 40dB = 1kHz R S = 1KΩ V10S = +30V RIAA COMPENSATION 0 100 1K 10K 100K FREQUENCY (Hz) TOTAL HARMONIC DIST ORATION (%) Quiescent Current as a Function of Supply Voltage Transient Response Voltage–Follower Large–Signal Pulse Response Input Noise Voltage as a Function of Frequency Input Noise Current as a Function of Frequency Channel Separation Total Harmonic Distortion vs Output Voltage Distortion vs Frequency VO = 1VRMS