SA3600 PHILIPS | Alldatasheet
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/C0080 /C0115 /C0111/C0110/C0111 /C0115 SA3600 Low voltage dual-band RF front-end Product specification Supersedes data of 1999 March 18
1999 Nov 02
Philips Semiconductors Product specification SA3600Low voltage dual-band RF front-end
21999 Nov 02 853–2183 22617
DESCRIPTION
The SA3600 is an integrated dual-band RF front-end that operates at both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and is designed in a 20 GHz fT BiCMOS process—QUBiC2. The low-band (LB) receiver is a combined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 dB noise figure (NF) at 881 MHz with 17 dB of gain and an IIP3 of –7 dBm. The wide-dynamic range mixer has a 9.5 dB NF at 881 MHz with 9.5 dB of gain and an IIP3 of +6 dBm. The high-band (HB) receiver is a combined low-noise amplifier (LNA) and mixer, with the low-band and high-band mixers sharing the same mixer output. The LNA has a 2.2 dB NF at 1960 MHz with 16 dB of gain and an IIP3 of –5 dBm. The wide-dynamic range mixer has a 8.5 dB NF at 1960 MHz with 8.5 dB of gain and an IIP3 of +5.5 dBm.
FEATURES
- Low current consumption: LB ICC = 14.5 mA; HB ICC = 20.5 mA
- Outstanding low- and high-band noise figure
- LNAs with gain control (30 dB gain step)
- LO input and output buffers
- Selectable frequency doubler
- On chip logic for network selection and power down
- Very small outline package
APPLICATIONS
- 800 to 1000 MHz analog and digital receivers
- 1800 to 2000 MHz digital receivers
- Portable radios
- Mobile communications equipment PIN CONFIGURATION SR01596 HB_LNA_OUT GND HB_LNA_IN VCC HB_MXR+_IN HB_MXR–_IN PD1 GND HB_VCO_OUT PD2 GND LB_LNA_OUT GND LB_LNA_IN VCC LB_MXR_IN GND MXR+_OUT GND MXR–_OUT LB_VCO_IN PD3 HB_VCO_INLB_VCO_OUT 12 13
ORDERING INFORMATION
SA3600 TSSOP24 Plastic thin shrink small outline package; 24 leads; body width 4.4 mmSOT355–1 PIN DESCRIPTIONS PIN NO. PIN NAME DESCRIPTION PIN NO. PIN NAME DESCRIPTION
1 HB_LNA_OUT Highband LNA output 13 HB_VCO_IN Highband VCO input
2 GND Ground 14 PD3 Power down control 3
3 HB_LNA_IN Highband LNA input 15 LB_VCO_IN Lowband VCO input
4 Vcc Power supply 16 GND Ground
5 HB_MXR+_IN Highband mixer positive input 17 MXR–_OUT Mixer negative output
6 HB_MXR–_IN Highband mixer negative input 18 MXR+_OUT Mixer positive output
7 PD1 Power down control 1 19 GND Ground
8 GND Ground 20 LB_MXR_IN Lowband mixer input
9 HB_VCO_OUT Highband VCO buffered output 21 VCC Power supply
10 PD2 Power down control 2 22 LB_LNA_IN Lowband LNA input
11 GND Ground 23 GND Ground
12 LB_VCO_OUT Lowband VCO buffered output 24 LB_LNA_OUT Lowband LNA output
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Figure 1. Block Diagram
Philips Semiconductors Product specification SA3600Low voltage dual-band RF front-end
1999 Nov 02 4
The SA3600 is a highly integrated dual-band radio frequency (RF) front-end integrated circuit (IC) targeted for TDMA applications. This IC is split into separate low-band (LB) and high-band (HB) receivers. The LB receiver contains a low noise amplifier (LNA) and mixer that are designed to operate in the cellular frequency range (869–894MHz). The HB receiver contains an LNA and mixer that are designed to operate in the PCS frequency range (1930–1990 MHz). The SA3600 also contains a frequency doubler that can drive the HB mixer local oscillator (LO) port, allowing a single-band voltage controlled oscillator (VCO) to be used to drive both mixers. Modes for bypassing the doubler are also provided, in the case where a dual-band VCO is used. The SA3600 has eight modes of operation that control the LNAs, mixers, LO buffers and doubler. The select pins (PD1,2,3) are used to change modes of operation. The internal select logic powers the device down (0,0,0), turns on the LB LO buffer for use in transmit mode (0,0,1), enables cellular receive mode for high and low gain (0,1,X), enables PCS receive mode for high and low gain both without doubler (1,1,X) and with doubler (1,0,X). Low-Band Receive Section The LB circuit contains a LNA followed by a wide dynamic range active mixer. In a typical application circuit, the LNA output uses an external pull-up inductor to VCC and is AC coupled. The mixer IF outputs are differential and are combined with the high-band IF mixer outputs thereby eliminating the need for extra output pins. External inductors and capacitors can be used to convert the differential mixer outputs to single-ended. Furthermore, the LNA provides two gain settings: high gain (17dB) and low gain (–15 dB). The desired gain state can be selected by setting the logic pins (PD1,PD2,PD3) appropriately. High-Band Receive Section The HB circuit contains a LNA followed by a Gilbert cell mixer with differential inputs. The LNA output uses an internal pull-up inductor to VCC , which eliminates the need for an external pull-up. The mixer IF outputs are differential and are combined with the low-band IF mixer outputs thereby eliminating the need for extra output pins. Similar to the LB LNA, the HB LNA has two gain settings: high gain (16 dB) and low gain (–15 dB). Control Logic Section Pins PD1, PD2, and PD3, control the logic functions of the SA3600. The PD1 selects between LB and HB operations. In LB receive mode, the LB LNA is in high gain mode (or on) when PD1,2,3 are (0,1,1). In all other modes, the LB LNA is off. The LB mixer is on when PD1,2,3 are (0,1,X). In all other modes, the LB mixer is off. During transmit mode when PD1,2,3 are (0,0,1), the LB LO buffer is on, enabling use of the LO signal for the transmitter. In HB receive mode, the HB LNA is in high gain mode (or on) when PD1,2,3 are (1,X,1). In all other modes, the HB LNA is off. The HB mixer is on when PD1,2,3 are (1,X,X), and is off in all other modes. The on-chip frequency doubler (X2) is on in (1,0,X) modes. When the frequency doubler is on, the input signal from the LB LO buffer is doubled in frequency, which can then be used to drive the HB mixer LO port. The frequency doubler can also be bypassed in modes (1,1,X), in which case the HB mixer is driven directly by an external 2 GHz LO signal. Local Oscillator (LO) Section The LB LO buffers are on for all modes except sleep mode, when PD1,2,3 are (0,0,0), and for HB receive mode without doubler, PD1,2,3 are (1,1,X). The HB LO buffers are on only when PD1,2,3 are (1,1,X). The PD1,2,3 pins are used to power-up/down all LO input buffers, which minimizes the pulling effect on the external VCO when entering receive or transmit mode.
Philips Semiconductors Product specification SA3600Low voltage dual-band RF front-end
1999 Nov 02 5
ABSOLUTE MAXIMUM RATINGS 1 SYMBOL PARAMETER LIMITS UNITSSYMBOL PARAMETER MIN. MAX. UNITS VCC Supply voltage –0.3 +4.5 V VIN Voltage applied to any other pin –0.3 VCC +0.3 V PD Power dissipation, Tamb = +25 °C (still air) 555 mW TJ MAX Maximum junction temperature 150 °C PMAX Power input/output +20 dBm IMAX DC current into any I/O pin –10 +10 mA TSTG Storage temperature range –65 +150 °C TO Operating temperature –40 +85 °C NOTES: 1. IC is protected against ESD voltages up to 500 V (human body model). DC ELECTRICAL CHARACTERISTICS Unless otherwise specified, all Input/Output ports are single-ended. DC PARAMETERS VCC = +3.0 V, Tamb = +25°C unless otherwise specified SYMBOL PARAMETER TEST CONDITIONS TESTER LIMITS UNITSYMBOL PARAMETER PD1 PD2 PD3 MIN TYP MAX UNIT Sleep mode 0 0 0 0.1 1 µA Tx mode, LO lowband buffer 0 0 1 4.3 5.5 mA Rx mode cellular, low gain 0 1 0 10.1 12 mA ICC Rx mode cellular, high gain 0 1 1 14 16.5 mA ICC Rx mode PCS, low gain, x2 1 0 0 17.5 21 mA Rx mode PCS, high gain, x2 1 0 1 23.5 28 mA Rx mode PCS, low gain, no x2 1 1 0 14.5 17.5 mA Rx mode PCS, high gain, no x2 1 1 1 20.5 24.5 mA VIH Input HIGH voltage 0.5xVCC VCC +0.3 V VIL Input LOW voltage –0.3 0.2xVCC V IBIAS Input bias current Logic 1 or logic 0 –5 +5 µA
Philips Semiconductors Product specification SA3600Low voltage dual-band RF front-end
1999 Nov 02 6
AC ELECTRICAL CHARACTERISTICS VCC = +3.0 V, fRF = 881 MHz, fLO = 963 MHz, Tamb = +25°C, unless otherwise specified SYMBOL PARAMETER TEST CONDITIONS LIMITS UNITSYMBOL PARAMETER TEST CONDITIONS MIN. –3 σ TYP +3 σ MAX. UNIT Cascaded Gain Section G SYS LB LNA + Mixer, High Gain Filter loss = 3 dB 20.5 23.5 26.5 dB G BYP LB LNA + Mixer, Low Gain Filter loss = 3 dB –11.5 –8.5 –5.5 dB Low-band LNA Section fRF RF input frequency range 869 894 MHz G ENA Small signal gain ENABLED 16.1 17 17.9 dB NF ENA Noise figure ENABLED 1.5 1.7 1.9 dB IIP3ENA Input 3rd order Intercept Point –8.1 –7 –5.9 dBm P1dB ENA Input 1 dB Compression Point –20 dBm G BYP Small signal gain BYPASSED –15 dB NF BYP Noise figure BYPASSED 15 dB IIP3BYP Input 3rd order Intercept Point 15 dBm ZIN Input return loss2 50 Ω system 10 dB ZOUT Output return loss2 50 Ω system 10 dB TSW ENABLE/DISABLE speed 1 20 µs Low-band Mixer Section fRF RF input frequency range 869 894 MHz fIF IF output frequency range 70 200 MHz fLO LO input range 939 1100 MHz G MXR Small signal gain PLO = –5 dBm 9 9.5 10 dB NF MXR SSB Noise figure PLO = –5 dBm 8.6 9.5 10.4 dB IIP3MXR Input 3rd order Intercept Point PLO = –5 dBm 5.1 6 6.9 dBm P1dB MXR Input 1 dB Compression Point PLO = –5 dBm –14 dBm PLO LO input power range –7 –5 –3 dBm ZIN Input return loss2 50 Ω system 10 dB ZOUT Output return loss2 50 Ω system 10 dB Two-tone spurious rejection: PLO = –5 dBm 2-Tone 2(fRF –fTx), fRF –fTx=fIF/2 fRF =890.0 MHz @–36 dBm fTx=848.9 MHz @–20 dBm –110 dBm 3(fRF –fTx), fRF –fTx=fIF/3 fRF =876.3 MHz @–36 dBm fTx=848.9 MHz @–20 dBm –110 RF–LO RF to LO isolation 25 dB LO–RF LO to RF isolation 40 dB TSW ENABLE/DISABLE speed 1 20 µs Low-band LO Buffer Section PLO LO Input frequency range 939 1100 MHz PIN LO Input power 50 Ω matched LB_VCO_IN –7 –5 –3 dBm POUT LO Output power 50 Ω matched LB_VCO_OUT –8 –7.5 –7 dBm ZIN Input return loss2 50 Ω system 10 dB ZOUT Output return loss2 50 Ω system 10 dB Harmonic content PLO = –5 dBm –20 dBc TSW ENABLE/DISABLE speed 1 20 µs
Philips Semiconductors Product specification SA3600Low voltage dual-band RF front-end
1999 Nov 02 7
AC ELECTRICAL CHARACTERISTICS VCC = +3.0 V, fRF = 1960 MHz, fLO = 2042 MHz, Tamb = +25°C, unless otherwise specified SYMBOL PARAMETER TEST CONDITIONS LIMITS UNITSYMBOL PARAMETER TEST CONDITIONS MIN. –3 σ TYP +3 σ MAX. UNIT Cascaded Gain Section G SYS HB LNA + Mixer, High Gain Filter loss = 3 dB 18.5 21.5 24.5 dB G BYP HB LNA + Mixer, Low Gain Filter loss = 3 dB –12.5 –9.5 –6.5 dB High-band LNA Section fRF RF input frequency range 1930 1990 MHz G ENA Small signal gain ENABLED 15 16 17 dB NF ENA Noise figure ENABLED 1.9 2.2 2.5 dB IIP3ENA Input 3rd order Intercept Point –6.5 –5 –3.5 dBm P1dB ENA Input 1 dB Compression Point –14 dBm G BYP Small signal gain BYPASSED –15 dB NF BYP Noise figure BYPASSED 15 dB IIP3BYP Input 3rd order Intercept Point 15 dBm ZIN Input return loss2 50 Ω system, ENA and BYP 10 dB ZOUT Output return loss 50 Ω system, ENA and BYP 10 dB TSW ENABLE/DISABLE speed 1 20 µs High-band Mixer Section fRF RF input frequency range 1930 1990 MHz fIF IF output frequency range 70 200 MHz fLO LO input range 2000 2190 MHz G MXR Small signal gain PLO = –5 dBm 7.8 8.5 9.2 dB NF SSB Noise figure, doubler off PLO = –5 dBm 7.6 8.5 9.4 dB NF MXR SSB Noise figure, doubler on PLO = –5 dBm 8.1 9 9.9 dB IIP3 Input 3rd order Intercept Point, doubler offPLO = –5 dBm 4 5.5 7 dBm IIP3MXR Input 3rd order Intercept Point, doubler onPLO = –5 dBm 1.9 3 4.1 dBm P1dB MXR Input 1 dB Compression Point PLO = –5 dBm –14 dBm IF/2 rej Half-IF spurious rejection 2(fRF –fLO ), fRF –fLO =fIF/2, doubler off fRF =1972.0 MHz @–36 dBm –90 dBmIF/2 rej. Half-IF spurious rejection 2(f RF –fLO ), fRF –fLO =fIF/2, doubler on RF fLO =2013.1 MHz @–5 dBm –85 dBm IF/3 rej. Third-IF spurious rejection 3(f RF –fLO ), fRF –fLO =fIF/3 fRF =1985.7 MHz @–36 dBm fLO =2013.1 MHz @–5 dBm –114 dBm Two-tone spurious rejection: PLO = –5 dBm, fRF –fTx, fRF –fTx=fIF fRF =1933.0 MHz @–36 dBm fTx=1850.8 MHz @–20 dBm –70 2-tone 2(fRF –fTx), fRF –fTx=fIF/2 fRF =1951.0 MHz @–36 dBm fTx=1909.9 MHz @–20 dBm –115 dBm 3(fRF –fTx), fRF –fTx=fIF/3 fRF =1937.3 MHz @–36 dBm fTx=1909.9 MHz @–20 dBm –125 PLO LO input power range –7 –5 –3 dBm ZIN Input return loss2 50 Ω system 10 dB ZOUT Output return loss2 50 Ω system 10 dB RF–LO RF to LO isolation 40 dB LO–RF LO to RF isolation 30 dB TSW ENABLE/DISABLE speed 1 20 µs
Philips Semiconductors Product specification SA3600Low voltage dual-band RF front-end
1999 Nov 02 8
AC ELECTRICAL CHARACTERISTICS VCC = +3.0 V, Tamb = +25°C, unless otherwise specified SYMBOL PARAMETER TEST CONDITIONS LIMITS UNITSSYMBOL PARAMETER TEST CONDITIONS MIN. –3 σ TYP +3 σ MAX. UNITS High-band LO Buffer Section PLO LO Input frequency range 2000 2190 MHz PIN LO Input power 50 Ω matched HB_VCO_IN –7 –5 –3 dBm POUT LO Output power 50 Ω matched HB_VCO_OUT –8.8 –8 –7.2 dBm ZIN Input return loss2 50 Ω system 10 dB ZOUT Output return loss2 50 Ω system 10 dB Harmonic content PLO = –5 dBm –20 dBc TSW ENABLE/DISABLE speed 1 20 µs x2 LO Doubler Section fLO LO Input frequency 1000 1095 MHz PIN LO Input power 50 Ω matched LB_VCO_IN –7 –5 –3 dBm ZIN Input return loss2 50 Ω system 10 dB ZOUT Output return loss2 50 Ω system 10 dB TSW ENABLE/DISABLE speed 1 20 µs NOTES: 1. Dependent on external components. 2. External matching required.
Philips Semiconductors Product specification SA3600Low voltage dual-band RF front-end
1999 Nov 02 9
PIN NO PIN MNEMONIC DC V EQUIVALENT CIRCUIT
1 HB LNA OUT
3 HB LNA IN 0.8 SR01787 VBIAS
4 VCC
5 HB MXR+ IN 1.2 6 HB MXR– IN 1.2 SR01788
7 PD1
10 PD2 Apply externally
14 PD3
9 HB VCO OUT Pull-up externally to VCC
Philips Semiconductors Product specification SA3600Low voltage dual-band RF front-end
1999 Nov 02 10
PIN NO EQUIVALENT CIRCUITDC VPIN MNEMONIC 12 LB VCO OUT VCC – 0.2 V SR01791 VCC 13 HB VCO IN 1.9 SR01792 VBIAS VBIASVCC 15 LB VCO IN 1.0 SR01793 VCC
17 MXR– OUT
18 MXR+ OUT
Philips Semiconductors Product specification SA3600Low voltage dual-band RF front-end
1999 Nov 02 11
PIN NO EQUIVALENT CIRCUITDC VPIN MNEMONIC 20 LB MXR IN 1.2 SR01795 VBIASVCC 22 LB LNA IN 0.8 SR01796 VBIAS VCC
24 LB LNA OUT Pull-up externally to VCC
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VCC = +3.0 V, Tamb = +25/C0095C; unless otherwise specified. Figure 2. ICC versus VCC (mode 000 – sleep mode) Figure 3. ICC versus VCC (mode 001 – transmit mode) Figure 4. ICC versus VCC (mode 010 – LB receive, low gain) Figure 5. ICC versus VCC (mode 011 – LB receive, high gain) Figure 6. ICC versus VCC (mode 100 – HB receive, low gain, Figure 7. ICC versus VCC (mode 101 – HB receive, high gain,
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Figure 8. ICC versus VCC (mode 110 – HB receive, low gain, Figure 9. ICC versus VCC (mode 111 – HB receive, high gain, Figure 10. LB LNA gain versus frequency Figure 11. LB LNA low gain versus frequency Figure 12. LB LNA noise figure versus frequency Figure 13. LB LNA IIP3 versus frequency
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Figure 14. LB LNA 1 dB compression versus frequency Figure 15. HB LNA 1 dB compression versus frequency Figure 16. HB LNA gain versus frequency Figure 17. HB LNA low gain versus frequency Figure 18. HB LNA noise figure versus frequency Figure 19. HB LNA IIP3 versus frequency
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Figure 20. LB mixer conversion gain versus frequency Figure 21. LB mixer noise figure versus frequency Figure 22. LB mixer input IP3 versus frequency Figure 23. LB mixer 1 dB compression versus frequency Figure 24. HB mixer conversion gain versus frequency, Figure 25. HB mixer noise figure versus frequency,
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Figure 26. HB mixer input IP3 versus frequency, Figure 27. HB mixer 1 dB compression versus frequency, Figure 28. HB mixer half-IF spur versus frequency Figure 29. HB mixer half-IF spur versus frequency Figure 30. HB mixer conversion gain versus frequency, Figure 31. HB mixer noise figure versus frequency,
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Figure 32. HB mixer input IP3 versus frequency, Figure 33. HB mixer input IP2 versus frequency, Figure 34. LB LO output power versus frequency (mode 010) Figure 35. HB LO output power versus frequency
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Figure 36. SA3600 production test circuit schematic
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10 C26
Figure 37. SA3600 Application circuit (fIF = 82 MHz)
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Table 1. Low-band LNA S-parameters (high gain mode)
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Table 2. Low-band LO input (pin 15) and output (pin 12) S-parameters
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Table 2. Low-band LO input (pin 15) and output (pin 12) S-parameters (continued)
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Table 3. Mixer output S-parameters
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Table 4. Low-band mixer input S-parameters
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Table 5. High-band LNA S-parameters
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Table 6. High-band LO input (pin 13) and output (pin 9) S-parameters
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Table 6. High-band LO input (pin 13) and output (pin 9) S-parameters (continued)
Philips Semiconductors Product specification SA3600Low voltage dual-band RF front-end
1999 Nov 02 28
TSSOP24: plastic thin shrink small outline package; 24 leads; body width 4.4 mm SOT355-1
Philips Semiconductors Product specification SA3600Low voltage dual-band RF front-end
1999 Nov 02 29
Philips Semiconductors Product specification SA3600Low voltage dual-band RF front-end
1999 Nov 02 30
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Disclaimers Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Philips Semiconductors
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P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381 Copyright Philips Electronics North America Corporation 1999 All rights reserved. Printed in U.S.A. Date of release: 11-99 Document order number: 9397-750-06558 /C0080 /C0115 /C0111/C0110/C0111 /C0115 Data sheet status Objective specification Preliminary specification Product specification Product status Development Qualification Production Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Data sheet status [1] Please consult the most recently issued datasheet before initiating or completing a design.