SA07

SA01 MITSUBISHI | Alldatasheet

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Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR ARRAY 〉 SA01, SA02, SA04, SA07 THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER SA01, SA02, SA04, SA07 APPLICATION Automatic strobe flasher Symbol VDRM ]1 VDSM ]1 VRRM IFGM Topr Tstg Parameter Repetitive peak off-state voltage Non-repetitive peak off-state voltage Repetitive peak reverse voltage Pulse current ability Peak gate forward current Operating ambient temperature Storage temperature Unit V V V A A Main 400 400 See electrical characteristics –20 ~ +60 –40 ~ +125 SA01 Main Aux SA02 SA04 SA07 Aux 480 600 480 600 480 600 450 600 MAXIMUM RATINGS (Ta= –20 ~ +60°C, unless otherwise noted) 1/CR 2/CR 3/CR 4/CR 5/CR /CR MAIN THYRISTOR: ANODE MAIN THYRISTOR: GATE MAIN AND AUX. THYRISTOR: CATHODE AUX. THYRISTOR: GATE AUX. THYRISTOR: ANODE OUTLINE DRAWING Dimensions in mm 4 × 3=1 2 +0.5

8 MAX

10 MAX

0.5 3 1 0.5

4 MAX

Commutating characteristics C M =700µF, ITM =200A, C C=2.2µF C M =1000µF, ITM =230A, C C=2.5µF C M =700µF, ITM =200A, C C=1.4µF Guide No. (ASA100) Type SA01 SA02 SA04 SA07 Aux thyristor High sensitive IGT ≤=250µA High holding current IH ≥ 25mA High holding current IH ≥ 25mA High sensitive IGT ≤ 250µA Main Aux Main Aux ]1. Connect 1kΩ resistor between gate to cathode.

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR ARRAY 〉 SA01, SA02, SA04, SA07 THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER Symbol IDRM IRRM IGT VGT IH Unit µA µA mA V mA ]1. Connect 1kΩ resistor between gate to cathode. ]2. Minimum value SA01 SA02 SA04 SA07 Main 100 100 1.5 Aux 0.25 1.0 1.0 Parameter Repetitive peak off-state current Repetitive peak reverse current Gate trigger current Gate trigger voltage Holding current ]2 ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted) Main 100 100 1.5 Aux 100 100 1.5 Main 100 100 2.0 Aux 100 100 1.5 Main 100 100 1.5 Aux 0.25 1.0 1.0 47nC Cυ trg 22k i1 i5 iG L C MVCM + 10k 470 470 SR1FM 10n 123452 IP υ trg iG iG tw t t t t SAOX SA120 AUX THYRISTORMAIN THYRISTOR 47n Fig. 1 Test circuit Fig. 3 Pin position and Equivalent circuit Fig. 2 The voltage and current waveforms

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR ARRAY 〉 SA01, SA02, SA04, SA07 THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER 101 103 –20 0 20 102 40 60 80 10 30 50 70–10 MAIN THYRISTOR SA02,04 AUX THYRISTOR SA01,07 AUX THYRISTOR TYPICAL EXAMPLE 0.6 0.4 0.2 –0.2 –0.4 8030–10–20 0 1 02 0 4 05 06 07 0 0.5 0.3 0.1 –0.1 –0.3 TYPICAL EXAMPLE MAIN THYRISTOR AUX THYRISTOR GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)GATE TRIGGER CURRENT (T j = t°C) GATE TRIGGER CURRENT (T j = 25°C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)GATE TRIGGER VOLTAGE (T j = t°C) GATE TRIGGER VOLTAGE (T j = 25°C) COMMUTATION CHARACTERISTICS IN STROBE APPLICATION SA series commutates at arbitrary conducting duration tw under following condition. (See Fig. 1, 2) Please confer following sheets in case that CM or ITM is different from mentioned value. (See shown under) COMMUTATING CHARACTERISTICS (Ta=25°C, Single pulse operation) SA01 SA02 SA04 350 1000 230 2.5 Unit V µF A µH µF SA07 700 200 1.4 700 200 2.2 Parameter Main capacitor charging voltage Main capacitor Peak on-state current Anode reactor Commutating capacitor Symbol VCM C M ITM L C C NOTICE Please consider counterplans against induced noise across common impedance. (between common cathode 3 and the ground point of trigger cicuit for the auxiliary thyristor) PERFORMANCE CURVES

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR ARRAY 〉 SA01, SA02, SA04, SA07 THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER 1000 800 600 400 200 220120 140 160 180 200C C = 0.8µF C C = 0.9µF C C = 1.0µF C C = 1.1µF C C = 1.2µF C C = 1.3µF C C = 1.4µF C C = 1.5µF 1000 800 600 400 200 220120 140 160 180 200 C C = 1.8µF C C = 1.9µF C C = 2.0 µF C C = 2.1 µF C C = 2.2 µF C C = 2.3 µF C C = 1.7µF VCM = 350V Ta = 25°C L = 25µH SEE FIG.1 1.8 1.6 1.4 1.2 1.0 0.8 10050100 20 30 40 60 70 80 90 1.7 1.5 1.3 1.1 0.9 TYPICAL EXAMPLE 101 103 –20 0 20 102 40 60 80 –10 10 30 50 70 TYPICAL EXAMPLE SA01,07 AUX THYRISTOR SA02,04 AUX THYRISTOR 102 23100 571 01 23 57 1 02 23 57 1 03 104 103 101 TYPICAL EXAMPLE MAIN THYRISTOR SA01,07 AUX THYRISTOR SA02,04 AUX THYRISTOR 1400 1200 1000 800 600 400 260160 180 200 220 240 C C = 2.4µF C C = 2.2µF C C = 2.0µF C C = 1.8µF C C = 2.6µF C C = 2.8µF VCM = 350V L = 25µH T a = 25°C SEE FIG.1 HOLDING CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)HOLDING CURRENT (T j = t°C) HOLDING CURRENT (T j = 25°C) GATE TRIGGER CURRENT VS. GATE TRIGGER PULSE WIDTH GATE TRIGGER PULSE WIDTH (µs) 100 (%)GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC ) COMMUTATING CHARACTERISTICS (SA01,SA02) MAIN CAPACITOR (µF) PEAK ON-STATE CURRENT (A) COMMUTATING CHARACTERISTICS (SA07) MAIN CAPACITOR (µF) PEAK ON-STATE CURRENT (A) COMMUTATING CHARACTERISTICS (SA04) MAIN CAPACITOR (µF) PEAK ON-STATE CURRENT (A) COMMUTATING CAPACITOR VS. AMBIENT TEMPERATURE AMBIENT TEMPERATURE (°C) 100 (%)COMMUTATING CAPACITOR (Ta = t°C) COMMUTATING CAPACITOR (Ta = 25°C)