S952T VISHAY | Alldatasheet

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/C0068Easy Gate 1 switch-off with PNP switching tran- sistors inside PLL /C0068High AGC-range with less steep slope /C0068Integrated gate protection diodes /C0068Low noise figure /C0068High gain /C0068Improved cross modulation at gain reduction /C0068SMD package 13 579 94 9279 S952T Marking: 952 Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 95 10831 94 9278 S952TR Marking: 52R Plastic case (SOT 143R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 13 56613 654 S952TRW Marking: W95 Plastic case (SOT 343R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1

www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 20-Jan-992 (6) Document Number 85062 Absolute Maximum Ratings Tamb = 25/C0095C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Drain - source voltage VDS 12 V Drain current ID 30 mA Gate 1/Gate 2 - source peak current ±IG1/G2SM 10 mA Gate 1/Gate 2 - source voltage ±VG1/G2SM 6 V Total power dissipation Tamb ≤ 60 /C0176C Ptot 200 mW Channel temperature TCh 150 /C0176C Storage temperature range Tstg –55 to +150 /C0176C Maximum Thermal Resistance Tamb = 25/C0095C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35/C0109m Cu R thChA 450 K/W Electrical DC Characteristics Tamb = 25/C0095C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Drain - source breakdown voltage ±IG1S = 10 /C0109A, VG2S = VG1S = 0 ±V(BR)DSS 15 V Gate 1 - source breakdown voltage ±IG1S = 10 mA, VG2S = VDS = 0 ±V(BR)G1SS 7 10 V Gate 2 - source breakdown voltage ±IG2S = 10 mA, VG1S = VDS = 0 ±V(BR)G2SS 7 10 V Gate 1 - source leakage current +VG1S = 5 V, VG2S = VDS = 0 +IG1SS 20 nA Gate 2 - source leakage current ±VG2S = 5 V, VG1S = VDS = 0 ±IG2SS 20 nA Drain - source operating current VDS = VRG1 = 9 V, VG2S = 4 V, RG1 = 390 k/C0087 IDSO 7 10 14 mA Gate 1 - source cut-off voltage VDS = VRG1 = 9 V, VG2S = 4 V, ID = 100 /C0109A VG1S(OFF) 0.4 1.2 V Gate 2 - source cut-off voltage VDS = VRG1 = 9 V, RG1 = 390 k/C0087, ID = 100 /C0109A VG2S(OFF) 1.0 V Remark on improving intermodulation behavior: By setting RG1 = 300 k/C0087 instead of 390 k/C0087, typical value of IDSO will raise up to about 15 mA and improved inter- modulation behavior will be performed.

www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 20-Jan-99 3 (6) Document Number 85062 Electrical AC Characteristics VDS = 9 V, VG2S = 4 V, ID = 10 mA, f = 1 MHz , Tamb = 25/C0095C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Forward transadmittance y21s 20 24 28 mS Gate 1 input capacitance C issg1 2.1 2.5 pF Feedback capacitance C rss 20 fF Output capacitance C oss 0.9 pF Power gain G S = 2 mS, GL = 0.5 mS, f = 200 MHz G ps 26 dBg G S = 3,3 mS, GL = 1 mS, f = 800 MHz G ps 16.5 20 dB AGC range VDS = 9 V, VG2S = 1 to 4 V, f = 800 MHz /C0068G ps 40 dB Noise figure G S = 2 mS, GL = 0.5 mS, f = 200 MHz F 1 dBg G S = 3,3 mS, GL = 1 mS, f = 800 MHz F 1.3 dB

www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 20-Jan-994 (6) Document Number 85062 Dimensions of S952T in mm 96 12240 Dimensions of S952TR in mm 96 12239

www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 20-Jan-99 5 (6) Document Number 85062 Dimensions of S952TRW in mm 96 12238

www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 20-Jan-996 (6) Document Number 85062 Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423