S9018 LUGUANG | Alldatasheet
Document overview
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Technical content
Silicon Epitaxial Planar Transistor S9018
FEATURES
z High current gain bandwidth product. z power dissipation.(P C =200mW).
APPLICATIONS
z NPN epitaxial silicon transistor.
ORDERING INFORMATION
Type No. Marking Package Code S 9 0 1 8 J 8 S O T - 2 3 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units V CBO Collector-Base Voltage 25 V V CEO Collector-Emitter Voltage 18 V V EBO Emitter-Base Voltage 4 V I C Collector Current -Continuous 50 mA P C Collector Dissipation 200 mW T T stg Junction and Storage Temperature -55 to +150 ℃
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =100μA,I E =0 25 V Collector-emitter breakdown voltage V (BR)CEO I C =0.1mA,I B =0 18 V Emitter-base breakdown voltage V (BR)EBO I E =-100μA,I C =0 4 V Collector cut-off current I CBO V CB =20V,I E =0 0.1 μA Collector cut-off current I CEO V CE =15V,I B =0 0.1 μA Emitter cut-off current I EBO V EB =3V,I C =0 0.1 μA DC current gain h FE V CE =5V,I C =1mA 70 190 Collector-emitter saturation voltage V CE(sat) I C =10 mA, I B = 1mA 0.5 V Base-emitter saturation voltage V BE(sat) I C =10 mA, I B = 1mA 1.4 V Transition frequency f T V CE =5V, I C = 5mA f=400MHz 600 MHz http://www.lgesemi .com mai l:lge@lgesemi.comRevision:20170701-P1 SOT-23 Dim Min Max A 2.70 3.10 B 1.10 1.50 C 1.0 Typical D 0.4 Typical E 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J 0.1 Typical K 2.20 2.60 All Dimensions in mm A B C D E J H K G
@ Ta=25℃ unless otherwise specified Silicon Epitaxial Planar Transistor S9018 http://www.lgesemi .com mai l:lge@lgesemi.comRevision:20170701-P1 Device Package Shipping S9018 SOT-23 3000/Tape&Reel