S9018 SECOS | Alldatasheet

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Any changing of specification will not be informed individual S9018 NPN Silicon General Purpose Transistor DEVICE MARKING S9018 = J8 Power dissipation PCM : 0.2 W Collector Current ICM : 0.05 A Collector-base voltage FEATURES Collector Base Emitter Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 K J C H L A B S GV 1 2 D Top View http://www.SeCoSGmbH.com Elektronische Bauelemente V(BR)CBO : 25 V Operating & storage junction temperature Tj, Tstg : - 55 O C ~ + 150 O C E LECTRICAL CH ARACTERISTICS (Tamb=25℃ u nless o therwise sp ecified) P arameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO Ic = 0.1mA, IB=0 18 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 4 V Collector cut-off current ICBO V CB=20V, IE=0 0.1 µA Collector cut-off current ICEO V CE=15V, IB=0 0.1 µA Emitter cut-off current IEBO V EB= 3V, IC=0 0.1 µA DC current gain hFE(1) V CE=5V, IC= 1mA 70 190 Collector-emitter saturation voltage VCE(sat) I C=10mA, IB= 1mA 0.5 V Base-emitter saturation voltage VBE(sat) I C=10mA, IB= 1mA 1.4 V Transition frequency fT VCE=5V, IC= 5mA f=400MHz

600 MHz

01-Jun-2004 Rev. B Page 1 of 1 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free