S9016 SUNMATE | Alldatasheet
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Technical content
Features
/c183 /c183 A E J L TOP VIEW M B C H G D K SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 /c97 0/c176 8/c176 All Dimensions in mm Maximum Ratings and Electrical Characteristics T A = 25/c176C unless otherwise specified Collector Current.(I C = 25mA） Power dissipation.(P C =200mW) V CBO Collector-Base Voltage 30 V V CEO Collector-Emitter Voltage 20 V V EBO Emitter-Base Voltage 4 V I C Collector Current -Continuous 25 mA P C Collector Dissipation 200 mW T T stg Junction and Storage Temperature -55~150 ℃ Symbol Parameter Value Units
T
Electrical Characteristics
A = 25/c176C unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =100μA,I E =0 30 V Collector-emitter breakdown voltage V (BR)CEO I C =0.1mA,I B =0 20 V Emitter-base breakdown voltage V (BR)EBO I E =100μA,I C =0 4 V Collector cut-off current I CBO V CB =30V,I E =0 0.1 μA Emitter cut-off current I EBO V EB =3V,I C =0 0.1 μA DC current gain h FE V CE =5V,I C =1mA 28 90 198 Collector-emitter saturation voltage V CE(sat) I C =10mA, I B = 1mA 0.1 0.3 V Base-emitter on voltage V BE(on) V CE =5V, I C =1mA 0.72 V Transition frequency f T V CE =5V, I C = 1mA 400 620 MHz Output capacitance C ob V CB =10V, I E =0,f=1MHz 1.2 1.6 pF Noise figure NF V CE =5V,I C =1.0, f=100MHz,R S =50Ω 1.2 1.6 pF
@ Ta=25℃ unless otherwise specified