S9016 ETC | Alldatasheet
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Technical content
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9016 TRANSISTOR (NPN)
FEATURES
P CM: 0 . 3 W ( T a mb = 2 5℃) Collector current I CM: 0 . 0 2 5 A Collector-base voltage V (BR)CBO: 3 0 V Operating and storage junction temperature range T J, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO Ic= o.1mA, I B=0 20 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 5 V Collector cut-off current ICBO V CB= 30V, IE=0 0.1 µA Emitter cut-off current IEBO V EB= 3V, IC=0 0.1 µA DC current gain hFE(1) V CE=5V, IC= 1mA 28 270 Collector-emitter saturation voltage VCE(sat) I C= 10mA, IB= 1mA 0.3 V Transition frequency fT VCE= 5V, IC= 1mA f =100MHz 300 MHz CLASSIFICATION OF h FE(1) Rank D E F G H I J Range 28-45 39-60 54-80 72-108 97-146 132-198 180-270 1 2 3 TO-92 1. EMITTER 2. BASE 3. COLLECTOR