S9015 WEITRON | Alldatasheet

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C C WEITRON http://www.weitron.com.tw PNP General Purpose Transistors (Ta=25 C) -50 -5.0 100 -45 Total Device Dissipation T =25 C 0.4 W Junction Temperature T j 150 Storage, Temperature -55 to +150 A TO-92 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR Characteristics Symbol Min Max Unit

ELECTRICAL CHARACTERISTICS

Collector-Emitter Breakdown Voltage (IC= -1 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -100uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) Collector Cutoff Current (VCB= -50 Vdc, IE=0) Emitter Cutoff Current (VEB= -5.0V c, I =0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO -5.0 -0.05 Vdc Vdc Vdc uAdc uAdc -45 -50 -0.05 d C

(IC= -10 mAdc, VCE= -5 Vdc, f=30MHz) fT 150 - MHz DC Current Gain (IC= -1mAdc, VCE=-5Vdc) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (IC= -100 mAdc, IB= -10mAdc) HFE VCE(sat) VBE(sat) Vdc Vdc 60 1000 On Characteristics Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol UnitMin Max S9015 WEITRONWEITRON WEITRON http://www.weitron.com.tw (IC= -100 mAdc, IB= -10 mAdc) -0.3 CLASSIFICATION OF h FE Rank Range A D 60-150 400-1000 B 100-300 C 200-600

http://www.weitron.com.tw S9015 WEITRONWEITRON FIG.1 FIG.2 FIG.3 FIG.5 FIG.6 FIG.4

http://www.weitron.com.tw S9015 Dim A B C D E G H J K L Min 3.30 1.10 0.38 0.36 4.40 3.43 4.30 Max TO-92 TO-92 Outline Dimensions unit:mm 3.70 1.40 0.55 0.51 4.70 4.70 2.64 14.50 1.270TYP E C H A B D L J K G 2.44 14.10