S9015_V01 TGS | Alldatasheet
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T O-92 Plastic-Encapsulate Transistors S9015 T RANSISTOR (PNP) FEA TURES z High Total Pow er Dissipation.(PC=0.45W) z High hFE an d Good Linearity z Complement ary to S9014 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Para meter Value Unit VCBO Coll ector-Base Voltage -50 V VCE O Coll ector-Emitter Voltage -45 V VEB O Emitter-Base V oltage -5 V IC Coll ector Current -Continuous -0.1 A PC Coll ector Power Dissipation 0.45 W Tj Junctio n Temperature 150 ℃ Tst g S torage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions Min Typ Max Unit Co llector-base breakdown voltage V(B R)CBO IC= -100μA, IE=0 -50 V Co llector-emitter breakdown voltage V(B R)CEO I C= -1mA, IB= 0 -45 V Emitter-b ase breakdown voltage V( BR)EBO IE= -100μA, IC=0 -5 V Co llector cut-off current I CB O V CB= -50V, IE= 0 -0.05 μA Emitter cut-off current I EBO V EB= -5 V, IC= 0 -0.05 μA DC cu rrent gain h FE V CE=-5 V, IC= -1mA 60 1000 Co llector-emitter saturation voltage VCE (sat) I C= -100mA, IB= -10mA -0.3 V Bas e-emitter saturation voltage VBE( sat) I C= -100mA, IB=-10mA -1 V T ransition frequency f T VCE=-5 V, IC= -10mA f=30MHz 100 MHz CLASSIFIC ATION OF h FE(1) Rank A B C Range 60-1 50 100-300 300-400 T O-92 .EMITTER 2. BASE 3. COLLECTOR TIGER ELECTRONIC CO.,LTD
-0.1 -1 -10 -1 -10 -100 100 1000 0 25 50 75 100 125 150 100 200 300 400 500 -0 -2 -4 -6 -8 -10 -0.1 -1 -10 -100 100 1000 -1 -10 -100 -400 -600 -800 -1000 -0.1 -10 -100 -1 -10 -100 -10 -100 -1000 -20 f=1MHz I E =0/I C T a =25 V CB / V EB C ob / C ib C ob C ib CAPACITANCE C (pF) REVERSE VOLTAGE V R (V) COMMON EMITTER V CE =-5V T a =25 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) P C — — T a COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) COMMON EMITTER T a =25 Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) -9.0uA -6.3uA -8.1uA -5.4uA -4.5uA -7.2uA -3.6uA -2.7uA -1.8uA IB=-0.9uA COMMON EMITTER V CE = -5V I C T a =25 T a =100 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) -0.2-0.2 I C f T h FE β=20 I C V BEsat T a =100 T a =25 BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE =-5V V BE I C T a =100 T a =25 COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) β=20 T a =100 T a =25 I C V CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) Typical Characteristics