S9015 PFS | Alldatasheet
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Technical content
TRANSISTOR (PNP)
FEATURES
z High total power dissipation.(P C =0.45W) z High h FE and good linearity z Complementary to S9014 MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage -50 V V CEO Collector-Emitter Voltage -45 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -0.1 A P C Collector Power Dissipation 0.45 W T j Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C = -100 μ A, I E =0 -50 V Collector-emitter breakdown voltage V (BR)CEO I C = -1mA, I B =0 -45 V Emitter-base breakdown voltage V (BR)EBO I E =-100 μ A, I C =0 -5 V Collector cut-off current I CBO V CB =-50V, I E =0 -0.05 μ A Emitter cut-off current I EBO V EB = -5V, I C =0 -0.05 μ A DC current gain h FE V CE =-5V, I C = -1mA 60 1000 Collector-emitter saturation voltage V CE(sat) I C =-100mA, I B = -10mA -0.3 V Base-emitter saturation voltage V BE(sat) I C =-100mA, I B =-10mA -1 V Transition frequency f T V CE =-5V, I C = -10mA 30MHz
100 MHz
FE(1) Rank A B C D Range 60-150 250-300 300-400 400-1000 TO-92 1.EMITTER 2. BASE 3. COLLECTOR Web Site: WWW.PS-PFS.COM
T y p i c a l C h a r a c t e r i s t i c s S 9 0 1 5 S9015 TRANSISTOR (PNP) Web Site: WWW.PS-PFS.COM