S9015 SECOS | Alldatasheet
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Any changing of specification will not be informed individual S9015 PNP Silicon Low Frequency, Low Noise Amplifier DEVICE MARKING S9015 =M6 Power dissipation PCM : 0.2 W Collector Current ICM : -0.1 A Collector-base voltage FEATURES Collector Base Emitter Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 K J C H L A B S GV 1 2 D Top View http://www.SeCoSGmbH.com Elektronische Bauelemente ELECTRICAL CHARACTERISTICS ( Tamp.=25 O C unless otherwise specified) V(BR)CBO : -50 V Operating & storage junction temperature Tj, Tstg : - 55 O C ~ + 150 O C P arameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100µA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1mA, IB=0 - 45 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO V CB=-50V, IE=0 -0.1 µA Emitter cut-off current IEBO V EB= -5V, IC=0 -0.1 µA DC current gain hFE(1) V CE=-5V, IC= -1mA 200 1000 Collector-emitter saturation voltage VCE(sat) I C=-100mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) I C=-100mA, IB=-10mA -1 V Transition frequency fT VCE=-5V, IC= -10mA f=30MHz
150 MHz
C LASSIFICATION OF h FE(1) Rank L H Range 200-450 450- 1000 01-Jun-2004 Rev. B Page 1 of 2 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
Any changing of specification will not be informed individual S9015 PNP Silicon Low Frequency, Low Noise Amplifier http://www.SeCoSGmbH.com Elektronische Bauelemente Typi c a l Char a c teri st i c s F i g u re 1. St ati c Ch aracteri s ti c F i g u r e 2. DC c u rren t G a i n F i g u re 3. Base-E m i tter Satu rati o n Vo l t ag e Co l l ecto r mi tt er S a tu r a ti o n V o l t ag e F i g u re 4 Base-Em i t t e r O n V o l t ag e F i g u re 5. Co l l ecto r O u tp u t Cap aci t an ce F i g u r e 6. Cu rren t G i an Ban d w i d t h Pro d u ct -0 -2 -4 -6 -8 -1 0 -1 2 -1 4 -1 6 -1 8 -2 0 IB = - 400µA IB = - 350µA IB = - 300µA IB = - 250µA IB = - 200µA IB = - 150µA IB = - 100µA IB = - 5 0µA IC [ m A] , COL L E CT OR CURRE NT VCE [V ], COLLE CT O R -E M I T T E R V OLT A GE - 0. 1 - 1 - 10 - 100 - 1000 100 1000 VCE = - 5 V hFE, DC C URRENT GAIN IC [m A ] , CO LLE CT O R CURR E N T -0 .1 -1 -1 0 -1 0 0 100 100 IC = 20 IB VBE (s a t ) VCE (s a t ) VBE(s a t ), VCE( s at ) [ m V] , SAT U R ATI O N VO L T AGE IC [ m A] , CO L L E C T O R CU RREN T 100 VCE = - 5 V IC [ m A ], CO LL E C T O R CU RRE NT VBE [ V] , BASE- EMI T T ER VO L T AG E -1 -10 -10 0 f = 1 M H z IE = 0 Cob [ p F ] , O U TPUT CAPACI T ANC E VCB [ V ] , CO L L ECTO R- BASE V O L T AG E -1 -1 0 100 1000 VCE = - 6 V fT[ M Hz], C URR ENT GAI N BAND W IDT H PRO DUCT IC [m A ], C O L L E C T O R CU RRE N T 01-Jun-2004 Rev. B Page 2 of 2