S9015 DGNJDZ | Alldatasheet
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Technical content
TRANSISTOR (PNP)
FEATURES
z Complementary to S9014 MARKING: M6 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage -50 V V CEO Collector-Emitter Voltage -45 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -0.1 A P C Collector Power Dissipation 0.2 W T j Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (T a=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C = -100 μ A, I E =0 -50 V Collector-emitter breakdown voltage V (BR)CEO I C = -0.1mA, I B =0 -45 V Emitter-base breakdown voltage V (BR)EBO I E =-100 μ A, I C =0 -5 V Collector cut-off current I CBO V CB =-50 V, I E =0 -0.1 μ A Emitter cut-off current I EBO V EB = -5V, I C =0 -0.1 μ A DC current gain h FE V CE =-5V, I C = -1mA 200 1000 Collector-emitter saturation voltage V CE (sat) I C =-100mA, I B = -10mA -0.3 V Base-emitter saturation voltage V BE (sat) I C =-100mA, I B =-10mA -1 V Transition frequency f T V CE =-5V, I C = -10mA 30MHz
150 MHz
- BASE 2. EMITTER 3. COLLECTOR B,Dec,2011 SOT-23 Plastic-Encapsulate Transistors DONGGUAN NANJING ELECTRONICS LTD.,
-0.1 -1 -10 -0.1 -1 -10 -100 100 1000 0 25 50 75 100 125 150 100 150 200 250 -0 -2 -4 -6 -8 -0.1 -1 -10 -100 100 1000 -1 -10 -100 -0.1 -0.1 -10 -100 -1 -10 -100 -0.01 -0.1 -20 f=1MHz IE=0/IC=0 Ta=25 ℃ VCB/ VEBCob/ Cib —— Cob Cib CAPACITANCE C (pF) REVERSE VOLTAGE VR (V) COMMON EMITTER V CE=-5V Ta=25℃ TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) PC —— T a COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE Ta ( )℃ -6uA -8uA -10uA -12uA -16uA -20uA -18uA -14uA COMMON EMITTER T a=25℃ -4uA IB=-2uA Static Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) COMMON EMITTER V CE= -5V IC Ta=25℃ Ta=100℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) -0.2-0.2 ICfT —— hFE —— β=10 ICVBEsat —— Ta=100℃ Ta=25℃ BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) COMMON EMITTER V CE=-5V S9015Typical Characterisitics VBEIC —— Ta=100℃ Ta=25℃ COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (V) β=10 Ta=100℃ Ta=25℃ ICVCEsat —— COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (mA) B,Dec,2011