S9015 DSK | Alldatasheet
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Technical content
Silicon Epitaxial Planar Transistor S9015
FEATURES
z Complementary To S9014. z Excellent H FE Linearity. z Power dissipation.(P C =0.2W)
APPLICATIONS
z Low frequency , low noise amplifier. S O T - 2 3
ORDERING INFORMATION
Type No. Marking Package Code S9015 M6 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units V CBO Collector-Base Voltage -50 V V CEO Collector-Emitter Voltage -45 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -100 mA P C Collector Dissipation 200 mW T T stg Junction and Storage Temperature -55~150 ℃ Pb Lead-free Diode Semiconductor Korea www.diode.kr
Silicon Epitaxial Planar Transistor S9015
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =-100μA,I E =0 -50 V Collector-emitter breakdown voltage V (BR)CEO I C =-0.1mA,I B =0 -45 V Emitter-base breakdown voltage V (BR)EBO I E =-100μA,I C =0 -5 V Collector cut-off current I CBO V CB =-50V,I E =0 -0.1 μA Emitter cut-off current I EBO V EB =-5V,I C =0 -0.1 μA DC current gain h FE V CE =-5V,I C =-1mA 200 1000 Collector-emitter saturation voltage V CE(sat) I C =-100mA, I B =- 10mA -0.3 V Base-emitter saturation voltage V BE(sat) I C =-100mA, I B = -10mA -1 V Transition frequency f T V CE =-5V, I C = -10mA f=30MHz M H z CLASSIFICATION OF h FE(1) Rank L H Range 200-450 450-1000 www.diode.kr Diode Semiconductor Korea
Silicon Epitaxial Planar Transistor S9015 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea
Silicon Epitaxial Planar Transistor S9015 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOLDERING FOOTPRINT Unit : mm
PACKAGE INFORMATION
A 2.85 2.95 B 1.25 1.35 C 1.0Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J 0.1Typical K 2.35 2.45 All Dimensions in mm Device Package Shipping S9015 SOT-23 3000/Tape&Reel www.diode.kr Diode Semiconductor Korea