S9015 DCCOM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
R DC COMPONENTS CO., LTD. TECHNICAL SPECIFICA TIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in pre-amplifier of low level and low noise. Pinning 1 = Emitter 2 = Base 3 = Collector TO-92 .022(0.56) .014(0.36) .050 (1.27) .148(3.76) .132(3.36) Typ .190(4.83) .170(4.33) .100 (2.54) Typ .050 (1.27)Typ .022(0.56) .014(0.36) .190(4.83) .170(4.33) .500 (12.70) Min o Typ o Typ. o Typ 3 2 1 o Typ. Dimensions in inches and (millimeters) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current IC -100 mA Total Power Dissipation PD 450 mW Junction Temperature TJ +150 oC Storage Temperature TSTG -55 to +150 oC Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO -50 - - V IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO -45 - - V IC=-1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-100µA, IC=0 Collector Cutoff Current ICBO - - -50 nA VCB=-50V, IE=0 Emitter Cutoff Current IEBO - - -50 nA VEB=-5V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - -0.2 -0.7 V IC=-100mA, IB=-5mA Base-Emitter Saturation Voltage(1) VBE(sat) - -0.82 -1 V IC=-100mA, IB=-5mA Base-Emitter On Voltage VBE(on) -0.6 -0.65 -0.75 V IC=-2mA, VCE=-5V DC Current Gain(1) hFE 60 - 1000 - IC=-1mA, VCE=-5V Transition Frequency fT 100 190 - MHz IC=-10mA, VCE=-5V Output Capacitance Cob - 4.5 7 pF VCB=-10V, f=1MHz, IE=0
Electrical Characteristics
(Ratings at 25 oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Classification of hFE Rank A B C D Range 60~150 100~300 200~600 400~1000
Electrical Characteristic Curves S9015 R DC COMPONENTS CO., LTD. -10 -20 -30 -40 -50 I B = -400 µ A I B = -350 µ A I B = -300 µ A I B = -250 µ A I B = -200 µ A I B = -150 µ A I B = -100 µ A I B = -50 µ A I C [mA], COLLECTOR CURRENT V CE [V], COLLECTOR-EMITTER VOLTAGE -10 -100 -1000 V CE = -5V h FE , DC CURRENT GAIN I C [mA], COLLECTOR CURRENT -0.1 -1 -10 -100 -10 -100 -1000 I C = 20 I B V BE (sat) V CE (sat) V BE (sat), V CE (sat)[mV], SATURATION VOLTAGE I C [mA], COLLECTOR CURRENT -1 -10 100 1000 V CE = -6V f T [MHz], CURRENT GAIN BANDWIDTH PRODUCT I C [mA], COLLECTOR CURRENT Typical Output Characteristics DC Current Transfer Ratio vs. Collector Current Base-Emitter Saturation Voltage Collector -Emitter Saturation Voltage Current Gain-Bandwidth Product