S9014W_15 SECOS | Alldatasheet
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Plastic Encapsulated Transistor 01-June-2002 Rev. A Page 1 of 2 Top View A L C B D G H JF K E 1 2 Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE Complementary to S9015W PACKAGING INFORMATION Weight: 0.0074 g MARKING CODE ABSOLUTE MAXIMUM RATINGS (at TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage V CBO 50 V Collector to Emitter Voltage V CEO 45 V Emitter to Base Voltage V EBO 5 V Collector Current – Continuous I C 100 mA Collector Power Dissipation P C 200 mW Junction, Storage Temperature T J, TSTG +150, -55 ~ +150 ℃ ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base Breakdown Voltage V(BR)CBO 50 - - V I C = 100μA, IE = 0 Collector-emitter Breakdown Voltage V(BR)CEO 45 - - V I C = 0.1mA, IB = 0 Emitter-base Breakdown Voltage V(BR)EBO 5 - - V I E = 100μA, IC = 0 Collector Cut-off Current ICBO - - 100 nA V CB = 50 V, IE = 0 Collector Cut-off Current ICEO - - 100 nA V CE = 35V, IB = 0 Emitter Cut-off Current IEBO - - 100 nA V EB = 3V, IC = 0 Collector-emitter Saturation Voltage VCE(sat) - - 300 mV I C = 100mA, IB = 5mA Base-emitter Saturation Voltage VBE(sat) - 1000 mV I C = 100mA, IB = 5mA DC Current Gain hFE 200 - 1000 V CE = 5V, IC = 1mA Transition Frequency fT 150 - - MHz V CE = 5V, IC = 10mA, f = 30MHz CLASSIFICATION OF hFE Rank L H hFE 200 - 450 450 - 1000 SOT-323 A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.25 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. F 0.20 0.40
Plastic Encapsulated Transistor 01-June-2002 Rev. A Page 2 of 2 CHARACTERISTIC CURVES