S9014W DGNJDZ | Alldatasheet

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Technical content

S9014W TRANSISTOR (NPN)

FEATURES

 Complementary to S9015W  Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 100 mA PC Collector Power Dissipation 200 mW RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W Operation Junction and Storage Temperature Range TJ,Tstg -55～+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO I C=100µA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO I C=100µA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO I E=100µA, IC=0 5 V Collector cut-off current ICBO V CB=50V, IE=0 100 nA Collector cut-off current ICEO V CE=35V, IB=0 1 uA Emitter cut-off current IEBO V EB=4V, IC=0 100 nA DC current gain hFE V CE=5V, IC=1mA 200 1000 Collector-emitter saturation voltage VCE(sat) I C=100mA, IB=5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=5mA 1 V Base-emitter voltage VBE V CE=5V, IC=2mA 0.58 0.7 V Transition frequency fT V CE=5V,IC=10mA , f=30MHz 150 MHz Collector output capacitance Cob V CB=10V, IE=0, f=1MHz 3.5 pF CLASSIFICATION OF hFE RANK L H RANGE 200–450 450–1000 MARKING J6 SOT–323 1. BASE 2. EMITTER 3. COLLECTOR DONGGUAN NANJING ELECTRONICS LTD., Dongguan Nanjing Electronics Ltd. www.dgnjdz.com

0.1 1 10 0.1 100 0 25 50 75 100 125 150 100 150 200 250 0.1 100 02468 0.1 1 10 100 0.1 0.1 1 10 100 100 1000 0.1 1 10 100 0.01 0.1 0.1 1 10 100 100 1000 f=1MHz I E =0/I C T a =25 V CB / V EB C ob / C ib C ob C ib CAPACITANCE C (pF) REVERSE VOLTAGE V R (V) P C —— T a COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) COMMON EMITTER V CE = 5V V BE I C T a =100 T a =25 COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) 20uA COMMON EMITTER T a =25 18uA 16uA 14uA 12uA 10uA 8uA 6uA 4uA I B =2uA Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) f T h FE β=20 I C V BEsat T a =100 T a =25 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE = 5V I C I C T a =25 T a =100 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) β=20 T a =100 T a =25 I C V CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE =5V T a =25 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) Typical Characteristics Dongguan Nanjing Electronics Ltd. www.dgnjdz.com

A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP SOT-323 Suggested Pad Layout Dongguan Nanjing Electronics Ltd. www.dgnjdz.com

Dongguan Nanjing Electronics Ltd. www.dgnjdz.com