S9014W DSK | Alldatasheet
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Technical content
Silicon Epitaxial Planar Transistor S9014W
FEATURES
z Complementary To S9015W. z Excellent H FE Linearity. z Power dissipation.(P C =0.2W)
APPLICATIONS
z Per-Amplifier low level & low noise. SOT-323
ORDERING INFORMATION
Type No. Marking Package Code S9014W J6 SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units V CBO Collector-Base Voltage 50 V V CEO Collector-Emitter Voltage 45 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 100 mA P C Collector Dissipation 200 mW T T stg Junction and Storage Temperature -55~150 ℃ Pb Lead-free Diode Semiconductor Korea www.diode.kr
Silicon Epitaxial Planar Transistor S9014W
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =100μA,I E =0 50 V Collector-emitter breakdown voltage V (BR)CEO I C =0.1mA,I B =0 45 V Emitter-base breakdown voltage V (BR)EBO I E =-100μA,I C =0 5 V Collector cut-off current I CBO V CB =50V,I E =0 0.1 μA Collector cut-off current I CEO V CE =35V,I B =0 0.1 μA Emitter cut-off current I EBO V EB =3V,I C =0 0.1 μA DC current gain h FE V CE =5V,I C =1mA 200 1000 Collector-emitter saturation voltage V CE(sat) I C =100mA, I B = 5mA 0.3 V Base-emitter saturation voltage V BE(sat) I C =100mA, I B = 5mA 1 V Transition frequency f T V CE =6V, I C = 20mA f=30MHz 150 MHz CLASSIFICATION OF h FE(1) Rank L H Range 200-450 450-1000 www.diode.kr Diode Semiconductor Korea
Silicon Epitaxial Planar Transistor S9014W TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea
Silicon Epitaxial Planar Transistor S9014W PACKAGE OUTLINE Plastic surface mounted package SOT-323 SOLDERING FOOTPRINT Unit : mm
PACKAGE INFORMATION
S9014W SOT-323 3000/Tape&Reel SOT-323 Dim Min Max A 1.8 2.2 B 1.15 1.35 C 1.0Typical D 0.15 0.35 E 0.25 0.40 G 1.2 1.4 H 0.02 0.1 J 0.1Typical K 2.1 2.3 All Dimensions in mm www.diode.kr Diode Semiconductor Korea