S9014T SKTECHNOLGY | Alldatasheet
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Technical content
SOT-523 Plastic-Encapsulate Transistors S9014T TRANSISTOR (NPN)
FEATURES
Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 100 mA PC Collector Power Dissipation 200 mW RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO I C=100µA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO I C=100µA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO I E=100µA, IC=0 5 V Collector cut-off current ICBO V CB=50V, IE=0 100 nA Collector cut-off current ICEO V CE=35V, IB=0 100 nA Emitter cut-off current IEBO V EB=4V, IC=0 100 nA DC current gain hFE V CE=5V, IC=1mA 200 1000 Collector-emitter saturation voltage VCE(sat) I C=100mA, IB=5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=5mA 1 V Base-emitter voltage VBE V CE=5V, IC=2mA 0.58 0.7 V Transition frequency fT V CE=5V,IC=10mA , f=30MHz 150 MHz Collector output capacitance Cob V CB=10V, IE=0, f=1MHz 3.5 pF SOT–523 1. BASE 2. EMITTER 3. COLLECTOR S9014T REV.08 1 of 3 CLASSIFICATION OF hFE RANK L H RANGE 200–450 450–1000 MARKING J6 J7
0.1 1 10 0.1 100 0 25 50 75 100 125 150 100 150 200 250 0.1 100 02468 0.1 1 10 100 0.1 0.1 1 10 100 100 1000 0.1 1 10 100 0.01 0.1 0.1 1 10 100 100 1000 f=1MHz IE=0/IC=0 Ta=25 ℃ VCB/ VEBCob/ Cib —— Cob Cib CAPACITANCE C (pF) REVERSE VOLTAGE VR (V) PC —— T a COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE T ( )℃ COMMON EMITTER VCE= 5V VBEIC —— Ta=100℃ Ta=25℃ COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (V) 20uA COMMON EMITTER T a=25℃ 18uA 16uA 14uA 12uA 10uA 8uA 6uA 4uA IB=2uA Static Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) fT —— hFE —— β=20 ICVBEsat —— Ta=100℃ Ta=25℃ BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE= 5V IC IC Ta=25℃ Ta=100℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) β=20 Ta=100℃ Ta=25℃ ICVCEsat —— COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (mA) COMMON EMITTER V CE=5V Ta=25℃ TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) S9014T REV.08 2 of 3
REV.08 3 of 3