S9014T_15 SECOS | Alldatasheet
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Technical content
Any changing of specification will not be informed individual S9014T NPN Silicon Pre-Amplifier, Low Level & Low Noise Power dissipation PCM : 0.4 W Collector current ICM : 0.1 A Collector-base voltage
FEATURES
http://www.SeCoSGmbH.com Elektronische Bauelemente ELECTRICAL CHARACTERISTICS ( Tamp.=25 O C unless otherwise specified) V(BR)CBO : 50 V Operating & storage junction temperature Tj, Tstg : - 55 O C ~ + 150 O C P arameter Sy mbol T est conditions MIN T YP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA， I E=0 50 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA， I B=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100μA， I C=0 5 V Collector cut-off current I CBO V CB=50 V , IE=0 0.1 μA Collector cut-off current I CEO V CE=35V , I B=0 0.1 μA Emitter cut-off current I EBO V EB= 3V , IC=0 0.1 μA DC current gain h FE V CE=5V, I C= 1mA 60 1000 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100 mA, IB= 5mA 1 V Transition frequency f T VCE=5V, I C= 10mA f=30MHz
150 MHz
CLASSIFICA TION OF h FE(1) Rank A B C D Range 60-150 100-300 200-600 400-1000 TO-92 4.55±0.2 3.5±0.2 4.5±0.214.3 ±0.2 2.54 ±0.1 (1.27 Typ. ) 0.46 +0.1–0.1 0.43+0.08 –0.07 1 32 1: Emitter 2: Base 3: Collector 1.25–0.2 +0.2 0 1- J u n - 2 0 0 2 R e v . A P a g e 1 o f 2 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
Any changing of specification will not be informed individual S9014T NPN Silicon Low Frequency, Low Noise Amplifier http://www.SeCoSGmbH.com Elektronische Bauelemente Typic al Chara cter i st ics F i g u re 1. St ati c Ch aracteri s ti c F i g u r e 2. DC c u rren t G a i n F i g u re 3. Base-E m i tter Satu rati o n Vo l t ag e Co l l ecto r mi tt er S a tu r a ti o n V o l t ag e F i gu r e Cur r e n t Ga i n Ba nd wid t h P r odu c t 0 1 0 2 03 04 0 5 0 100 IB = 1 6 0µA IB = 1 4 0µA IB = 1 2 0µA IB = 1 0 0µA IB = 8 0µA IB = 6 0µA IB = 4 0µA IB = 2 0µA IC [ m A] , CO L L E CT OR CURRENT VCE [ V ], COLLE CT OR-E MIT T E R V OL T A GE 1 10 10 0 10 00 VCE = 5 V hFE, DC CURRENT G A IN IC [m A ], C O LL E C T O R CU RRE NT 1 1 0 1 00 1 000 000 IC = 2 0 IB VBE (sa t ) VCE (sa t ) VBE(s a t ) , VCE( s at ) [ m V] , SATURATI ON VO L T AGE IC [ m A] , CO L L E C T O R CU RRE NT 1 10 100 1000 100 1000 VCE = 5 V fT[ M Hz], C URR E N T GA I N B A N D W IDT H P R OD UCT IC [m A ], C O L L E C T O R CU RRE NT 01 -Jun-2002 Rev. A Page 2 of 2