S9014 WEITRON | Alldatasheet
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Technical content
C C WEITRON http://www.weitron.com.tw NPN General Purpose Transistors (Ta=25 C) 5.0 100 Total Device Dissipation T =25 C 0.4 W Junction Temperature T j 150 Storage, Temperature -55 to +150 A TO-92 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR Characteristics Symbol Min Max Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 100uAdc, IB=0) Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) Collector Cutoff Current (VCB= 50 Vdc, IE=0) Emitter Cutoff Current (VEB= 3.0V c, I =0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 5.0 0.1 Vdc Vdc Vdc uAdc uAdc 0.1 d C
(IC= 10 mAdc, VCE= 5 Vdc, f=30MHz) fT 150 - MHz DC Current Gain (IC= 1mAdc, VCE=5Vdc) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (IC= 100 mAdc, IB= 5 mAdc) HFE VCE(sat) VBE(sat) Vdc Vdc 60 1000 On Characteristics Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol UnitMin Max S9014 WEITRONWEITRON WEITRON http://www.weitron.com.tw (IC= 100 mAdc, IB= 5 mAdc) 0.3 CLASSIFICATION OF h FE Rank Range A D 60-150 400-1000 B 100-300 C 200-600
http://www.weitron.com.tw FIG.1 FIG.3 FIG.2 FIG.4 S9014
http://www.weitron.com.tw S9014 Dim A B C D E G H J K L Min 3.30 1.10 0.38 0.36 4.40 3.43 4.30 Max TO-92 TO-92 Outline Dimensions unit:mm 3.70 1.40 0.55 0.51 4.70 4.70 2.64 14.50 1.270TYP E C H A B D L J K G 2.44 14.10