S9014_V01 TGS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
TO-92 Plastic-Encapsulate Transistors S 9 0 1 4 TRANSISTOR (NPN) FEA TURES z High Tota l Power Dissipation.(PC=0.45W) z High hFE and Good Line arity z Complementar y to S9015 MAXIMUM RATINGS (Ta=25℃ unless otherw ise noted) Symbol Paramete r Value Unit VCBO Collector-Bas e Voltage 50 V VCEO Collector-Emitter V oltage 45 V VEBO Emitter-Base Vo ltage 5 V IC Collector Curr ent -Continuous 0.1 A PC Collector Po wer Dissipation 0.45 W TJ Junction T emperature 150 ℃ Tstg St orage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collecto r-base breakdown voltage V(BR)CB O I C=100 μA, IE=0 50 V Collecto r-emitter breakdown voltage V(BR)CE O I C= 1m A, IB=0 45 V Emitter-ba se breakdown voltage V(BR )EBO I E=100 μA, IC=0 5 V Collecto r cut-off current ICBO V CB=50V , IE=0 0.1 μA Collecto r cut-off current ICEO V CE=35V , IB=0 0.1 μA Emitter cut-off current IEBO V EB= 5V , IC=0 0.1 μA DC curr ent gain hFE V CE=5V , IC= 1 mA 60 1000 Collecto r-emitter saturation voltage VCE(sat) I C=100mA, IB= 5mA 0.3 V Base -emitter saturation voltage VBE(sat) I C=100mA, IB= 5mA 1 V Tr ansition frequency fT VCE=5V , IC= 10mA 30MHz
150 MHz
TION OF h FE(1) Rank A B C Range 60-150 100- 300 300-400 TO -92 EMITTER 2. BASE 3. COLLECTOR TIGER ELECTRONIC CO.,LTD
0 5 10 15 20 25 30 35 40 45 50 0.1 1 10 100 100 1000 0.1 1 10 100 200 400 600 800 1000 1200 0.1 1 10 0.1 02 5 5 0 75 100 1 25 100 200 300 400 500 11 0 100 1000 1 10 100 100 1000 0.1 1 10 100 100 1000 18uA 16.2uA 14.4uA 12.6uA 108uA 9uA 7.2uA 5.4uA 3.6uA I B =1.8uA COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) Static Characteristic V BE Ta=100 Ta=25 VCE=5V 5000 COLLCETOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (mV) Ta=25 Ta=100 β=20 BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURRENT I C (mA) I C V BEsat f=1MHz I E =0/ I C Ta=25 o C C ob C ib V CB / V EB C ob / C ib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) COLLECTOR POWER DISSIPATION Pc (mW) AMBIENT TEMPERATURE Ta ( ) Pc — — Ta I C fT —— VCE=5V Ta=25 o C I C TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT I C (mA) 2000.4 Ta=100 o C Ta=25 o C V CE =5V I C h FE — — DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) Ta=25 Ta=100 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) β=20 COLLECTOR CURRENT I C (mA) I C V CEsat Typical Characteristics