S9014 SKTECHNOLGY | Alldatasheet
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S% a # BAS evicces $9014 NPN Silicon Epitaxial Planar Transistor CCOUECTOR for switching and AF amplifier applications wf) euren é SOT-23 a 2 Absolute Maximum Ratings (T, = 25 °C) ee a Storage Temperature Range - 55 to + 150 Characteristics at T,= 25°C Symbol [vin [Wax [Unt] DC Current Gain at Voe=5 V, lo=1mA hee 200 450 Collector Cutoff Current \\ n at Veg = 50 V CBO n Emitter Cutoff Current JSivgesw™ we | | Collector Base Breakdown Voltage vy, Vv at lo = 100 pA (eRycB0 Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage y, v at le= 100 pA (@R)EBO Collector Emitter Saturation Voltage V, v at Ic = 100 mA, Is=5 mA CE Base Emitter Saturation Voltage y, 4 Vv at Ic = 100 mA, Is=5 mA PEtsa) Gain Bandwidth Product Output Capacitance c. F at Vea = 10 V, f= 1 MHz 8 p Noise Figure REV.08 1 of 2
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Figure 1. Static Characteristic Figure 2. DC current Gain Figure 3. Base-Emitter Saturation Voltage Figure 4. Current Gain Bandwidth Product