S9014 PFS | Alldatasheet
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Technical content
TRANSISTOR (NPN)
FEATURES
z High total power dissipation.(P C =0.45W) z High hFE and good linearity z Complementary to S9015 MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 50 V V CEO Collector-Emitter Voltage 45 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 0.1 A P C Collector Power Dissipation 0.45 W T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =100μA, I E =0 50 V Collector-emitter breakdown voltage V (BR)CEO I C = 1mA, I B =0 45 V Emitter-base breakdown voltage V (BR)EBO I E =100μA, I C =0 5 V Collector cut-off current I CBO V CB =50V, I E =0 0.1 μA Collector cut-off current I CEO V CE =35V, I B =0 0.1 μA Emitter cut-off current I EBO V EB = 5V, I C =0 0.1 μA DC current gain h FE V CE =5V, I C = 1mA 60 1000 Collector-emitter saturation voltage V CE (sat) I C =100mA, I B = 5mA 0.3 V Base-emitter saturation voltage V BE (sat) I C =100mA, I B = 5mA 1 V Transition frequency f T V CE =5V, I C = 10mA f=30MHz
150 MHz
FE(1) Rank A B C D Range 60-150 200-300 250-300 300-400 TO-92 1. EMITTER 2. BASE 3. COLLECTOR Web Site: WWW.PS-PFS.COM