S9014 SECOS | Alldatasheet
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Any changing of specification will not be informed individual S9014 NPN Silicon Pre-Amplifier, Low Level & Low Noise DEVICE MARKING: S9014 =J6 Power dissipation PCM : 0.2 W Collector Current ICM : 0.1 A Collector-base voltage FEATURES Collector Base Emitter Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 K J C H L A B S GV 1 2 D Top View http://www.SeCoSGmbH.com Elektronische Bauelemente ELECTRICAL CHARACTERISTICS ( Tamp.=25 O C unless otherwise specified) V(BR)CBO : 50 V Operating & storage junction temperature Tj, Tstg : - 55 O C ~ + 150 O C P arameter Sy mbol T est conditions MIN T YP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA， I E=0 50 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA， I B=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100μA， I C=0 5 V Collector cut-off current I CBO V CB=50 V , IE=0 0.1 μA Collector cut-off current I CEO V CE=35V , I B=0 0.1 μA Emitter cut-off current I EBO V EB= 3V , I C=0 0.1 μA DC current gain h FE V CE=5V, I C= 1mA 200 1000 Collector-emitter saturation voltage VCE(sat) I C=100 mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) I C=100 mA, IB= 5mA 1 V Transition frequency f T VCE=5V, I C= 10mA f=30MHz
150 MHz
C L A S S I F I C AT I O N O F hF E ( 1 ) R a n k L H R a n g e 2 0 0 - 4 5 0 4 5 0 - 1 0 0 0 01-Jun-2004 Rev. B Page 1 of 2 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
Any changing of specification will not be informed individual S9014 NPN Silicon Low Frequency, Low Noise Amplifier http://www.SeCoSGmbH.com Elektronische Bauelemente Typic al Chara cter i st ics F i g u re 1. St ati c Ch aracteri s ti c F i g u r e 2. DC c u rren t G a i n F i g u re 3. Base-E m i tter Satu rati o n Vo l t ag e Co l l ecto r mi tt er S a tu r a ti o n V o l t ag e F i gu r e Cur r e n t Ga i n Ba nd wid t h P r odu c t 0 1 0 2 03 04 0 5 0 100 IB = 1 6 0µA IB = 1 4 0µA IB = 1 2 0µA IB = 1 0 0µA IB = 8 0µA IB = 6 0µA IB = 4 0µA IB = 2 0µA IC [ m A] , CO L L E CT OR CURRENT VCE [ V ], COLLE CT OR-E MIT T E R V OL T A GE 1 10 10 0 10 00 VCE = 5 V hFE, DC CURRENT G A IN IC [m A ], C O LL E C T O R CU RRE NT 1 1 0 1 00 1 000 000 IC = 2 0 IB VBE (sa t ) VCE (sa t ) VBE(s a t ) , VCE( s at ) [ m V] , SATURATI ON VO L T AGE IC [ m A] , CO L L E C T O R CU RRE NT 1 10 100 1000 100 1000 VCE = 5 V fT[ M Hz], C URR E N T GA I N B A N D W IDT H P R OD UCT IC [m A ], C O L L E C T O R CU RRE NT 01-Jun-2004 Rev. B Page 2 of 2