S9014 DGNJDZ | Alldatasheet

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Technical content

SOT-23 Plastic-Encapsulate Transistors S 9 0 1 4 TRANSISTOR (NPN)

FEATURES

z Complementary to S9015 MARKING: J6 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage 50 V V CEO Collector-Emitter Voltage 45 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 0.1 A P C Collector Power Dissipation 0.2 W T j Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ M ax Unit Collector-base breakdown voltage V (BR)CBO I C = 100 μ A, I E =0 50 V Collector-emitter breakdown voltage V (BR)CEO I C = 0.1mA, I B =0 45 V Emitter-base breakdown voltage V (BR)EBO I E =100 μ A, I C =0 5 V Collector cut-off current I CBO V CB =50 V , I E =0 0.1 μ A Collector cut-off current I CEO V CE =35V , I B =0 0.1 μ A Emitter cut-off current I EBO V EB = 3V , I C =0 0.1 μ A DC current gain h FE V CE =5V, I C = 1mA 200 1000 Collector-emitter saturation voltage V CE (sat) I C =100 mA, I B = 5mA 0.3 V Base-emitter saturation voltage V BE (sat) I C =100 mA, I B = 5mA 1 V Transition frequency f T V CE =5V, I C = 10mA 30MHz

150 MHz

  1. BASE 2. EMITTER 3. COLLECTOR B,Dec,2011 DONGGUAN NANJING ELECTRONICS LTD.,

0.1 1 10 0.1 100 0 25 50 75 100 125 150 100 150 200 250 0.1 100 02468 0.1 1 10 100 0.1 0.1 1 10 100 100 1000 0.1 1 10 100 0.01 0.1 0.1 1 10 100 100 1000 f=1MHz IE=0/IC=0 Ta=25 ℃ VCB/ VEBCob/ Cib —— Cob Cib CAPACITANCE C (pF) REVERSE VOLTAGE VR (V) PC —— T a COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE Ta ( )℃ COMMON EMITTER V CE= 5V VBEIC —— Ta=100℃ Ta=25℃ COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (V) 20uA COMMON EMITTER T a=25℃ 18uA 16uA 14uA 12uA 10uA 8uA 6uA 4uA IB=2uA Static Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) fT —— hFE —— β=20 ICVBEsat —— Ta=100℃ Ta=25℃ BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) COMMON EMITTER V CE= 5V S9014Typical Characterisitics IC IC Ta=25℃ Ta=100℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) β=20 Ta=100℃ Ta=25℃ ICVCEsat —— COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (mA) COMMON EMITTER V CE=5V Ta=25℃ TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) B,Dec,2011