S9014 UMW | Alldatasheet
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S 9 0 1 4 TRANSISTOR (NPN)
FEATURES
MARKING: J6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ M ax Unit Collector-base breakdown voltage V(BR)CBO I C= 100μA, I E=0 50 V Collector-emitter breakdown voltage V(BR)CEO I C= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO I E=100μA, IC=0 5 V Collector cut-off current ICBO V CB=50 V , I E=0 0.1 μA Collector cut-off current ICEO V CE=35V , I B=0 0.1 μA Emitter cut-off current IEBO V EB= 3V , I C=0 0.1 μA DC current gain hFE V CE=5V, IC= 1mA 200 1000 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100 mA, IB= 5mA 1 V Transition frequency fT VCE=5V, IC= 10mA f=30MHz 150 MHz CLASSIFICATION OF h FE Rank L H Range 200-450 450-1000 SOT-23 Plastic-Encapsulate Transistors UMW R UMW S9014 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR 1www.umw-ic.com 友台半导体有限公司
0.1 1 10 0.1 100 0 25 50 75 100 125 150 100 150 200 250 0.1 100 02468 0.1 1 10 100 0.1 0.1 1 10 100 100 1000 0.1 1 10 100 0.01 0.1 0.1 1 10 100 100 1000 f=1MHz IE=0/IC=0 Ta=25 ℃ VCB/ VEBCob/ Cib —— Cob Cib CAPACITANCE C (pF) REVERSE VOLTAGE VR (V) PC —— T a COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE Ta ( )℃ COMMON EMITTER VCE= 5V VBEIC —— Ta=100℃ Ta=25℃ COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (V) 20uA COMMON EMITTER Ta=25℃ 18uA 16uA 14uA 12uA 10uA 8uA 6uA 4uA IB=2uA Static Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) fT —— hFE —— β=20 ICVBEsat —— Ta=100℃ Ta=25℃ BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE= 5V IC IC Ta=25℃ Ta=100℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) β=20 Ta=100℃ Ta=25℃ ICVCEsat —— COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE=5V Ta=25℃ TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) 2www.umw-ic.com 友台半导体有限公司 SOT-23 Plastic-Encapsulate Transistors UMW R UMW S9014
Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF. 0.022 REF. Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP. 0.037 TYP. www.umw-ic.com 3 友台半导体有限公司 SOT-23 Plastic-Encapsulate Transistors UMW R UMW S9014