S9013W DGNJDZ | Alldatasheet
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Technical content
S9013W TRANSISTOR (NPN)
FEATURES
High Collector Current Excellent HFE Linearity MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 200 mW RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W Operation Junction and Storage Temperature Range TJ,Tstg -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO I C=100µA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO I C=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO I E=100µA, IC=0 5 V Collector cut-off current ICBO V CB=40V, IE=0 100 nA Collector cut-off current ICEO V CE=20V, IB=0 100 nA Emitter cut-off current IEBO V EB=5V, IC=0 100 nA DC current gain hFE V CE=1V, IC=50mA 120 400 Collector-emitter saturation voltage VCE(sat) I C=500mA, IB=50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.2 V Base-emitter voltage VBE VCE=1V, IC=10mA 0.7 V Transition frequency fT V CE=6V,IC=20mA , f=30MHz 150 MHz Collector output capacitance Cob V CB=6V, IE=0, f=1MHz 8 pF CLASSIFICATION OF hFE RANK L H J RANGE 120–200 200–350 300–400 Marking SOT–323 1. BASE 2. EMITTER 3. COLLECTOR MARKING J3= Device code DONGGUAN NANJING ELECTRONICS LTD., Dongguan Nanjing Electronics Ltd. www.dgnjdz.com
A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP SOT-323 Suggested Pad Layout Dongguan Nanjing Electronics Ltd. www.dgnjdz.com
Dongguan Nanjing Electronics Ltd. www.dgnjdz.com