S9013W DSK | Alldatasheet
Document overview
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Technical content
Silicon Epitaxial Planar Transistor S9013W
FEATURES
z High Collector Current.(I C = 500mA） z Complementary To S9012. z Excellent H FE Linearity. z Power dissipation.(P T =200mW)
APPLICATIONS
z H i g h C o l l e c t o r C u r r e n t . SOT-323
ORDERING INFORMATION
Type No. Marking Package Code S9013W J3 SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 500 mA P C Collector Dissipation 200 mW T T stg Junction and Storage Temperature -55~150 ℃ Pb Lead-free Diode Semiconductor Korea www.diode.kr
Silicon Epitaxial Planar Transistor S9013W
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =100μA,I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO I C =0.1mA,I B =0 25 V Emitter-base breakdown voltage V (BR)EBO I E =100μA,I C =0 5 V Collector cut-off current I CBO V CB =40V,I E =0 0.1 μA Collector cut-off current I CEO V CE =20V,I B =0 0.1 μA Emitter cut-off current I EBO V EB =5V,I C =0 0.1 μA V CE =1V,I C =50mA 120 400 DC current gain h FE V CE =1V,I C =500mA 40 Collector-emitter saturation voltage V CE(sat) I C =500mA, I B = 50mA 0.6 V Base-emitter saturation voltage V BE(sat) I C =500mA, I B = 50mA 1.2 V Transition frequency f T V CE =6V, I C = 20mA f=30MHz 150 MHz CLASSIFICATION OF h FE(1) Rank L H J Range 120-200 200-350 300-400 www.diode.kr Diode Semiconductor Korea
Silicon Epitaxial Planar Transistor S9013W TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea
Silicon Epitaxial Planar Transistor S9013W PACKAGE OUTLINE Plastic surface mounted package SOT-323 SOLDERING FOOTPRINT Unit : mm
PACKAGE INFORMATION
S9013W SOT-323 3000/Tape&Reel SOT-323 Dim Min Max A 1.8 2.2 B 1.15 1.35 C 1.0Typical D 0.15 0.35 E 0.25 0.40 G 1.2 1.4 H 0.02 0.1 J 0.1Typical K 2.1 2.3 All Dimensions in mm www.diode.kr Diode Semiconductor Korea