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WEJ ELECTRONIC CO.,LTD S9013 TRANSISTOR (NPN) FEATURE Power dissipation P CM: 0.625 W (Tamb=25 ℃ ) Collector current I CM: 0 . 5 A Collector-base voltage V (BR)CBO: 4 0 V Operating and storage junction temperature range T j, Tstg: - 5 5 ℃ to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR)CBO Ic= 100µA, I E=0 40 V Collector-emitter breakdown voltage V(BR)CEO I C= 1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO I E= 100µA, IC=0 5 V Collector cut-off current ICBO V CB= 40V, IE=0 0.1 µA Collector cut-off current ICEO V CE=20V, IE=0 0.1 µA Emitter cut-off current IEBO V EB= 5V, IC=0 0.1 µA hFE(1) V CE=1V, IC=50mA 64 400 DC current gain hFE(2) V CE=1V, IC= 500mA 40 Collector-emitter saturation voltage VCE(sat) I C= 500 mA, IB= 50mA 0.6 V Base-emitter voltage VBE(sat) I C= 500 mA, IB= 50mA 1.2 V Transition frequency f T VCE=6V, IC=20mA, f=30MHz
150 MHz
CLASSIFICATION OF hFE(1) Rank D E F G H I J Range 64-91 78-112 96-135 112-166 144-202 190-300 300-400 1 2 3 TO-92 1. EMITTER 2. BASE 3. COLLECTOR S9013 Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS