S9013 SECOS | Alldatasheet
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Any changing of specification will not be informed individual S9013 NPN Silicon General Purpose Transistor Power dissipation PCM : 0.3 W Collector Current ICM : 0.5 A Collector-base voltage FEATURES Collector Base Emitter Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 K J C H L A B S GV 1 2 D Top View http://www.SeCoSGmbH.com Elektronische Bauelemente Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100ȰAđ IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mAđ IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100ȰAđ IC=0 5 V Collector cut-off current I CBO VCB=40 V , I E=0 0.1 ȰA Collector cut-off current I CEO VCE=20V , I B=0 0.1 ȰA Emitter cut-off current IEBO VEB=5 V, I C=0 0.1 ȰA H FE(1) VCE=1V , IC= 50mA 120 350 DC current gain H FE(2) VCE=1V , IC=500mA 40 Collector-emitter saturation voltage VCE(sat) I C=500 mA , IB= 50mA 0.6 V Base-emitter saturation voltage VBE(sat) I C=500 mA , IB= 50mA 1.2 V Transition frequency f T VCE=6V, I C= 20mA f=30MHz
150 MHz
CLASSIFICATION OF h FE(1) /i863/i878/i891/i888 ͙Ḥ ͕Ḥ ELECTRICAL CHARACTERISTICS ( Tamp.=25 O C unless otherwise specified) V(BR)CBO : 40 V Operating & storage junction temperature Tj, Tstg : - 55 O C ~ + 150 O C 01-Jun-2005 Rev.B Page1 of 1 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free