S9013 DGNJDZ | Alldatasheet
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Technical content
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the PNP transistor 9012 is recommended. Absolute Maximum Ratings (T a = 25 OC) Parameter Symbol Value Unit Collector Base Voltage V CBO 40 V Collector Emitter Voltage V CEO 30 V Emitter Base Voltage V EBO 5 V Collector Current I C 500 mA Power Dissipation P tot 625 mW Junction Temperature T j 150 OC Storage Temperature Range T stg - 55 to + 150 OC Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit DC Current Gain a t VCE = 1 V, IC = 5 0 m A C u r r e n t G a i n G r o u p a t V CE = 1 V, IC = 500 mA G H I hFE hFE hFE hFE 110 190 290 200 300 380 Collector Base Cutoff Current a t VCB = 35 V ICBO - 100 nA Emitter Base Cutoff Current a t VEB = 5 V IEBO - 100 nA Collector Bae Breakdown Voltage a t IC = 100 μA V(BR)CBO 40 - V Collector Emitter Breakdown Voltage a t IC = 1 mA V(BR)CEO 30 - V Emitter Base Breakdown Voltage at IE = 100 μA V(BR)EBO 5 - V Collector Emitter Saturation Voltage a t IC = 500 mA, IB = 50 mA VCE(sat) - 0.6 V Base Emitter Saturation Voltage a t IC = 500 mA, IB = 50 mA VBE(sat) - 1.2 V Base Emitter Voltage a t VCE = 1 V, IC = 100 mA VBE - 1 V Gain Bandwidth Product a t VCE = 6 V, IC = 20 mA fT 100 - MHz 1. Emitter 2. Base 3. Collector TO-92 Plastic Package