S9013 GWSEMI | Alldatasheet
Document overview
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Technical content
TRANSISTOR(NPN)
FEATURES
MARKING: J3 BASE SOT-23 EMITTER COLLECTOR MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage V V CEO Collector-Emitter Voltage V V EBO Emitte r -Base V olta g e V I C Collector Current -Continuous 500 mA P C Collector Power Dissipation 300 mW T j Junction Temperature 150 T stg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C = 100 µA I E V Collector-emitter breakdown voltage V (BR)CEO I C = 0.1mA I B V Emitter-base breakdown voltage V (BR)EBO I E =100 µA , I C V Collector cut-off current I CBO V CB =40V, I E 0.1 µA Collector cut-off current I CEO V CE =20V, I B 0.1 µA Emitter cut-off current I EBO V EB = 5V, I C 0.1 µA h FE(1) V CE =1V, I C = 50mA 120 200 DC current gain h FE(2) V CE =1V, I C =500mA Collector-emitter saturation voltage V CE (sat) I C =500mA, I B = 50mA 0.6 V Base-emitter saturation voltage V BE (sat) I C =500mA, I B = 50mA 1.2 V Transition frequency f T V CE =6V, I C = 20mA 30MHz 150 MHz
TRANSISTOR(NPN) Typical Characteristics
TRANSISTOR(NPN) Plastic surface mounted package; 3 leads SOT-23 PACKAGE OUTLINE