S9013 DAYA | Alldatasheet
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Technical content
TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) FEATURE z Complementary to S9012 z Excellent h FE linearity MAXIMUM RATINGS T A =25℃ unless otherwise noted Symbol Parameter Value Units V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 500 mA P C Collector Dissipation 625 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR) CBO I C = 100μA , I E =0 40 V Collector-emitter breakdown voltage V(BR) CEO I C = 1mA , I B =0 25 V Emitter-base breakdown voltage V(BR) EBO I E = 100μA , I C =0 5 V Collector cut-off current I CBO V CB = 40V , I E =0 0.1 μA Collector cut-off current I CEO V CE =20V , I E =0 0.1 μA Emitter cut-off current I EBO V EB = 5V, I C =0 0.1 μA h FE(1) V CE =1V, I C =50mA 64 400 DC current gain h FE(2) V CE =1V, I C = 500mA 40 Collector-emitter saturation voltage V CE(sat) I C = 500mA, I B = 50mA 0.6 V Base-emitter voltage V BE(sat) I C = 500mA, I B = 50mA 1.2 V Transition frequency f T V CE =6V,I C =20mA,f=30MHz
150 MHz
FE(1) Rank D E F G H I J Range 64-91 78-112 96-135 112-166 144-202 190-300 300-400 TO-92 1. EMITTER 2. BASE 3. COLLECTOR
Typical Characteristics S9013