S9012T SECOS | Alldatasheet
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Any changing of specification will not be informed individual S9012T PNP Epitaxial Silicon Transistor TO-92 FEATURE Power dissipation PCM : 0.625 W Tamb=25 Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range Tj, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS˄Tamb=25ć unless otherwise specified ˅ P a r a m e t e r Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100A ˈ I E=0 -40 V Collector-emitter breakdown voltage V(BR)CEO I C= -1 mA , I B=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100Aˈ I C=0 -5 V Collector cut-off current ICBO V CB=- 40V , I E=0 -0.1 A Collector cut-off current ICBO V CB=-20V , I E=0 -0.1 A Emitter cut-off current IEBO V EB=- 5V, IC=0 -0.1 A hFE(1) V CE=-1V, IC=-50mA 64 300 DC current gain hFE(2) V CE=-1V, IC= -500mA 40 Collector-emitter saturation voltage VCE(sat) I C= -500 mA, IB= -50mA -0.6 V Base-emitter voltage VBE(sat) I C= -500 mA, IB=- 50mA -1.2 V Transition frequency f T VCE=-6V,IC=-20mA, f=30MHz
150 MHz
CLASSIFICATION OF h FE(1) Rank D E F G H I Range 64-91 78-112 96-135 112-166 144-202 190-300 4.55±0.2 3.5 ±0. 2 4.5±0.214.3 ±0. 2 2.54 ±0. 1 (1.27 Typ.) 0.46 +0.1–0.1 0.43 +0.08 –0.07 13 2 1: Emitter 2: Base 3: Collector 1.25–0.2 +0.2 0 1 - J u n - 2 0 0 2 R e v . A P a g e 1 o f 2 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free