S9012 WEITRON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

C C WEITRON http://www.weitron.com.tw PNP General Purpose Transistors (Ta=25 C) -40 -500 -25 Total Device Dissipation T =25 C 0.625 W Junction Temperature Tj 150 Storage, Temperature -55 to +150 A TO-92 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR Characteristics Symbol Min Max Unit

ELECTRICAL CHARACTERISTICS

Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) Collector Cutoff Current (VCE= -20 Vdc, I =0) Collector Cutoff Current (VCB= -40 Vdc, IE=0) Emitter Cutoff Current (VEB= -5.0V c, I =0) V(BR)CEO V(BR)CBO V(BR)EBO ICE0 ICBO IEBO -0.1 Vdc Vdc Vdc uAdc uAdc uAdc -25 -40 -0.1 -0.1 d B C Lead(Pb)-Free Pb

Transition frequency fT 150 - MHz DC Current Gain (IC= -50 mAdc, VCE= -1Vdc) (IC= -500 mAdc, VCE= -1Vdc) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (IC= 500 mAdc, IB= -50 mAdc) hFE(1) hFE(2) VCE(sat) VBE(sat) Vdc Vdc 300 On Characteristics Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol UnitMin Max -1.2 S9012 WE IT R ON WEITRON http://www.weitron.com.tw (IC= 500 mAdc, IB= -50 mAdc) -0.6 Rank D 64-91 78-112 96-135 112-166 144-202 190-300 E F G H I Range Classification Of hFE(1)

http://www.weitron.com.tw Typical Characteristics

http://www.weitron.com.tw S9012 Dim A B C D E G H J K L Min 3.30 1.10 0.38 0.36 4.40 3.43 4.30 Max TO-92 TO-92 Outline Dimensions unit:mm 3.70 1.40 0.55 0.51 4.70 4.70 2.64 14.50 1.270TYP E C H A B D L J K G 2.44 14.10